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    APT8065 Price and Stock

    Microchip Technology Inc APT8065BVRG

    MOSFET N-CH 800V 13A TO247
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    Mouser Electronics APT8065BVRG
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    Newark APT8065BVRG Bulk 50
    • 1 $13.03
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    Microchip Technology Inc APT8065BVRG
    • 1 $13.03
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    Onlinecomponents.com APT8065BVRG
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    TME APT8065BVRG 1
    • 1 $18.84
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    NAC APT8065BVRG Tube 29
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    Richardson RFPD APT8065BVRG 50
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    Master Electronics APT8065BVRG
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    Microchip Technology Inc APT8065SVRG

    MOSFET N-CH 800V 13A D3PAK
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    DigiKey APT8065SVRG Tube 40
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    Avnet Americas APT8065SVRG Tube 26 Weeks 40
    • 1 $14.09
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    Mouser Electronics APT8065SVRG 40
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    Newark APT8065SVRG Bulk 40
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    Microchip Technology Inc APT8065SVRG
    • 1 $14.09
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    Onlinecomponents.com APT8065SVRG
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    TME APT8065SVRG 1
    • 1 $20.45
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    NAC APT8065SVRG Tube 27
    • 1 $13.44
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    Master Electronics APT8065SVRG
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    Microchip Technology Inc APT8065BVFRG

    MOSFET N-CH 800V 13A TO247
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    DigiKey APT8065BVFRG Tube 40
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    Avnet Americas APT8065BVFRG Tube 32 Weeks 40
    • 1 $13.77
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    Mouser Electronics APT8065BVFRG
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    Newark APT8065BVFRG Bulk 40
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    Microchip Technology Inc APT8065BVFRG
    • 1 $13.77
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    Onlinecomponents.com APT8065BVFRG
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    TME APT8065BVFRG 1
    • 1 $20.05
    • 10 $15.87
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    NAC APT8065BVFRG Tube 27
    • 1 $13.18
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    Master Electronics APT8065BVFRG
    • 1 -
    • 10 $13.37
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    APT8065 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT8065 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT8065AVR Advanced Power Technology POWER MOS V 800V 11.5A 0.650 Ohm Original PDF
    APT8065AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8065BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8065BVFR Microsemi Power MOS V FREDFET Original PDF
    APT8065BVFRG Microchip Technology MOSFET N-CH 800V 13A TO247 Original PDF
    APT8065BVR Microsemi Power MOS V MOSFET Original PDF
    APT8065BVRG Microchip Technology MOSFET N-CH 800V 13A TO247 Original PDF
    APT8065SVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8065SVRG Microchip Technology MOSFET N-CH 800V 13A D3PAK Original PDF

    APT8065 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVFR 13A 0.650Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065BVFR O-247 O-247

    VG-S6

    Abstract: APT8065BVFR APT8065
    Text: APT8065BVFR Ω 13A 0.650Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065BVFR O-247 O-247 VG-S6 APT8065BVFR APT8065

    APT8065AVR

    Abstract: 115AJ
    Text: APT8065AVR 800V 11.5A 0.650Ω POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065AVR O-204AE) APT8065AVR 115AJ

    Untitled

    Abstract: No abstract text available
    Text: APT8065AVR 800V 11.5A 0.650W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065AVR O-204AE)

    APT8065SVR

    Abstract: No abstract text available
    Text: APT8065SVR 800V 13A 0.650Ω POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065SVR APT8065SVR

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVR 800V 13A 0.650Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT8065BVR O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT8065AVR 0.650Ω Ω 800V 11.5A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065AVR O-204AE)

    Untitled

    Abstract: No abstract text available
    Text: APT8065SVRG 800V 13A 0.650Ω POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8065SVRG APT8065SVRG

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    Untitled

    Abstract: No abstract text available
    Text: APT8065AVR A d va n ce d W /Æ PO W ER Te c h n o l o g y soov h .s a o.65on POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065AVR APT8065AVR 00A/ps) IL-STD-750

    APT8065

    Abstract: AS1210 APT8065BVR
    Text: • r ADVANCED W /Æ P o w er Tec h n o lo g y APT8065BVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065BVR O-247 APT8065 AS1210

    Untitled

    Abstract: No abstract text available
    Text: APT8065SVR A dvanced P o w er Te c h n o lo g y 800V 13A 0.650Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065SVR MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVR A dvanced P o w er Te c h n o l o g y 800V 13A 0.650Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065BVR O-247 MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVFR ADVANCED W 7Æ P o w e r T e c h n o lo g y soov i3 a POWER MOS V i o.65on FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065BVFR O-247 MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT8065SVR A dvanced W 7Æ P o w e r T e c h n o lo g y soov i3 a o.65on POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065SVR CuIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: • r R M A d va n ce d APT8065BVFR po w er Te c h n o l o g y soov POWER MOS V i3a o.6soq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065BVFR O-247

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065BVFR O-247 APT8065BVFR

    AS1210

    Abstract: No abstract text available
    Text: • K A dvanced W7Æ P o w er Tec h n o lo g y APT8065SVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065SVR AS1210

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A po w er Techno lo g y " APT8065SVR soov i3a o.6soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8065SVR APT8065SVR

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVR A dvanced P o w er Te c h n o lo g y ' 800V 13A 0.650Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065BVR O-247 APT8065BVR MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVFR A dvanced P ow er T e c h n o lo g y 9 800V POWER MOS V 13A 0.650Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065BVFR O-247 APT8065BVFR 00A/ms) 00A/HS) MIL-STD-750 00A/ns, O-247AD

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr