APT94 Search Results

APT94N60L2C3

Contextual Info: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G S MAXIMUM RATINGS Symbol VDSS

Contextual Info: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)

APT9402

Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
Contextual Info: APPLICATION NOTE APT9402 By: Kenneth Dierberger UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETs AND AVALANCHE ENERGY RATED MOSFETs Presented at PCIM ‘94 DALLAS 1 UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETS AND AVALANCHE ENERGY RATED MOSFETS

APT94N60L2C3

Contextual Info: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated

APT94N60L2C3G

Contextual Info: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel)

Contextual Info: APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT94N65LC6 • Extremedv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

75DQ60

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated

APT9403

Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
Contextual Info: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager

436F

Abstract: APT94N60L2C3
Contextual Info: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G S MAXIMUM RATINGS Symbol VDSS

drai

Contextual Info: APT94N65B2C6 APT94N65LC6 650V 94A 0.035Ω APT94N65B2C6 Super Junction MOSFET T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT94N65LC6 • Extreme dv/dt Rated D G S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated

APT94N65B2C3

Abstract: APT94N65B2C3G APT94N65B2
Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D

55-V160

Abstract: apt30df60
Contextual Info: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G S MAXIMUM RATINGS Symbol VDSS

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

APT9402

Contextual Info: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system