AVALANCHE Search Results

Contextual Info: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

Contextual Info: CSD19535KCS www.ti.com SLPS484 – JANUARY 2014 CSD19535KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19535KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating

ndf02n60zg

Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

M0139-01

Abstract: M0137-02 P0093-01
Contextual Info: CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

STPS2L60U

Abstract: "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14
Contextual Info: STPS2L60 Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature package ■ Avalanche capability specified ■ ECOPACK2 compliant component SMB flat A K DO-41 STPS2L60 Description Axial and surface mount power Schottky rectifiers

STPS20

Abstract: STPS200 stps2001
Contextual Info: STPS200170TV1 High voltage power Schottky rectifier Features • Negligible switching losses ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop ■ Insulated package: ISOTOP – Electrical insulation = 2500 V rms,

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time

Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output

Contextual Info: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay

DL5551P2

Abstract: NDL5516PC
Contextual Info: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high

Contextual Info: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

IRF820PBF

Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements

Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110

irfpf40

Contextual Info: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

AUIRLSL4030

Abstract: AULS4030 3LD2 gs 069 marking h3a 4.5v to 100v input regulator
Contextual Info: PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 AUIRLSL4030 Features l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Power MOSFETs Application Notes irf520

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

AUIRLS4030-7P

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

flyback xfmr 3.5 mh

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

100V Single P-Channel HEXFET MOSFET

Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

auirf7484q

Abstract: F7484Q AUIRF
Contextual Info: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)

910410

Contextual Info: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated