BUK555-200A
Abstract: BUK555-200B T0220AB
Text: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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bbS3131
003D615
BUK555-200A/B
T0220AB
-ID/100
BUK555-200A
BUK555-200B
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BUK657-400B
Abstract: transistor ZA 16
Text: L.'IE T> N AMER PHILIPS/DISCRETE LLSa'ïai DD3DÔÔS 111 • APX Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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BUK657-400B
-T0220AB
transistor ZA 16
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7408 philips
Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408
Text: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain
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0054flCH
BFG33;
BFG33/X
BFG33
OT143
7408 philips
MCD122
transistor c 6093
L7E transistor
IC 7408 ti
HCC80
transistor 406 specification
Hcc 036-0
lc 7408
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T3D DIODE
Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Text: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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0D307flS
BUK552-100A/B
T0220AB
BUK552
-100A
-100B
T3D DIODE
T3D 45 diode
T3D 55 diode
T3D 18 DIODE
Diode T3D 03
Diode T3D 35
dt t3d 13
BUK552-100A
BUK552-100B
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BFP91A
Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Text: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features
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bbS3T31
BFP91A
OT173
OT173X
BFQ23C.
OT173.
BFP91A
BFP91A NPN PHILIPS
BFQ23C
SOT173
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Untitled
Abstract: No abstract text available
Text: N AMER RHILIPS/DISCRETE APX bb53T31 DDS&blE 3S7 TIP47; TIP48 TIP49; TIP50 b^E ]> _ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in TO-220 envelope for am plifier
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bb53T31
TIP47;
TIP48
TIP49;
TIP50
O-220
TIP47
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Untitled
Abstract: No abstract text available
Text: PhilipsSemiconductors ^ bb53T31 0031716 213 M APX^^^^Productspecificatlon NPN 1 GHz video transistors ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'lE D — • PINNING FEATURES • High breakdown voltages DESCRIPTION PIN 1 emitter • High gain bandwidth product
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bb53T31
BFQ235;
BFQ235A
OT128B
BFQ255
BFQ255A
MBB891
D031722
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2PD601A
Abstract: No abstract text available
Text: bbsa^ai oosbGMT Philips Semiconductors » apx PNP general purpose transistor 2PB709; 2PB709A N ANER PHILIPS/DISCRETE FEATURES Objective specification b?E ]> PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. c DESCRIPTION
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2PB709;
2PB709A
2PD601
2PD601A
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
2PB709
2PB709AR:
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and
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0031bDb
BFQ66
OT173
OT173X
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PMBF4416
Abstract: PMBF4416A
Text: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections
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bb53q31
PMBF4416;
PMBF4416A
PMBF4416
DD240MD
PMBF4416
PMBF4416A
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SOT173
Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
Text: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency
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BFP520
OT173X)
BFP520
OT173
OT173X
MBC860
OT173.
OT173X.
900MHz.
SOT173
MBB866
mbc860
wideband transistor sot173
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TRANSISTOR SMD CODE B7
Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.
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PMBT3906
PMBT3906
TRANSISTOR SMD CODE B7
TRANSISTOR SMD MARKING CODE B7
transistor smd marking JT
smd transistor kn
transistor p2a
smd TRANSISTOR code b7
MARKING CODE SMD IC
smd transistor marking PA
K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE
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B35AP
Abstract: No abstract text available
Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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bbS3S31
BFQ34T
ON4497)
B35AP
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bbS3R31
0D321b2
BLT11
OT103
BLT11
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BFY90 PHILIPS
Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
Text: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)
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bb53S31
X3A-BFW92
BFW92
BFY90
BFS17
X3A-BFW92
URV-3-5-52/733
BFY90 PHILIPS
BFW92
BFW92 sot23
BFS17
BFY90
Philips BFy90
philips bfw92
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BUK637-500B
Abstract: No abstract text available
Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
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BUK637-500B
BUK637-500B
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PMST3904
Abstract: No abstract text available
Text: • Philips Semiconductors APX bb53^3]. 0D25e132 lib Product specification AMER PHILIPS/DISCRETE b?E D PMST3904 NPN switching transistor FEATURES PIN CONFIGURATION • S-mini package • Short switching time. DESCRIPTION NPN transistor in a plastic SOT323
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0D25e
PMST3904
OT323
MAM062
PMST3904
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Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors ^ 5 3 ^ 3 1 QDB5174 31A APX Preliminary specification b?E I> N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING PIN DESCRIPTION • High power gain • Gold metallization ensures excellent reliability
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QDB5174
BFR92AW
OT323
OT323
BFR92AW
BFR92A.
OT323.
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BST124
Abstract: depletion mode
Text: bhS3T31 Philips Semiconductors 0023=103 I APX 6T3 Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E ]> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs
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bhS3T31
023liÃ
BST124
O-126
PINNING-TO-126
MRC19S
BST124
depletion mode
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » • bb53T31 □D3D5TD 53b ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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bb53T31
O220AB
BUK452-60A/B
BUK452
-60Bn-source
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Untitled
Abstract: No abstract text available
Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a
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PMBF170
bb53T31
00ES81E
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TRANSISTOR BIZ
Abstract: BFQ292 BFQ293
Text: Philips Semiconductors 1^53^31 DG317flb flfciM W APX Preliminary specification BFQ292 PNP HDTV video transistor bTE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product 2 collector
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00317flb
BFQ292
BFQ293.
BFQ292
TRANSISTOR BIZ
BFQ293
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
K438-800A/B
BUK438
-800A
-800B
BUK438-800A/B
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philips MATV amplifiers
Abstract: CIL TRANSISTOR BFG621 PH* SOT223 transistor
Text: Philips Semiconductors 1^53^31 00314b7 IbT M APX Objective specification NPN 8 GHz wideband transistor BFG621 N AMER PHILIPS/DISCRETE FEATURES b'îE ]>' PINNING PIN • Low distortion DESCRIPTION • Gold metallization ensures excellent reliability 1 emitter
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00314b7
BFG621
BFG621
OT223
35K/W
philips MATV amplifiers
CIL TRANSISTOR
PH* SOT223 transistor
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