APX TRANSISTOR Search Results

BUK555-200A

Abstract: BUK555-200B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK657-400B

Abstract: transistor ZA 16
Contextual Info: L.'IE T> N AMER PHILIPS/DISCRETE LLSa'ïai DD3DÔÔS 111 • APX Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

7408 philips

Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408
Contextual Info: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain

T3D DIODE

Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Contextual Info: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BFP91A

Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Contextual Info: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features

Contextual Info: N AMER RHILIPS/DISCRETE APX bb53T31 DDS&blE 3S7 TIP47; TIP48 TIP49; TIP50 b^E ]> _ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in TO-220 envelope for am plifier

Contextual Info: PhilipsSemiconductors ^ bb53T31 0031716 213 M APX^^^^Productspecificatlon NPN 1 GHz video transistors ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'lE D — • PINNING FEATURES • High breakdown voltages DESCRIPTION PIN 1 emitter • High gain bandwidth product

2PD601A

Contextual Info: bbsa^ai oosbGMT Philips Semiconductors » apx PNP general purpose transistor 2PB709; 2PB709A N ANER PHILIPS/DISCRETE FEATURES Objective specification b?E ]> PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. c DESCRIPTION

Contextual Info: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and

PMBF4416

Abstract: PMBF4416A
Contextual Info: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections

SOT173

Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
Contextual Info: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency

TRANSISTOR SMD CODE B7

Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Contextual Info: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.

B35AP

Contextual Info: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

Contextual Info: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

BFY90 PHILIPS

Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
Contextual Info: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

PMST3904

Contextual Info: • Philips Semiconductors APX bb53^3]. 0D25e132 lib Product specification AMER PHILIPS/DISCRETE b?E D PMST3904 NPN switching transistor FEATURES PIN CONFIGURATION • S-mini package • Short switching time. DESCRIPTION NPN transistor in a plastic SOT323

Contextual Info: • Philips Semiconductors ^ 5 3 ^ 3 1 QDB5174 31A APX Preliminary specification b?E I> N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING PIN DESCRIPTION • High power gain • Gold metallization ensures excellent reliability

BST124

Abstract: depletion mode
Contextual Info: bhS3T31 Philips Semiconductors 0023=103 I APX 6T3 Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E ]> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » • bb53T31 □D3D5TD 53b ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a

TRANSISTOR BIZ

Abstract: BFQ292 BFQ293
Contextual Info: Philips Semiconductors 1^53^31 DG317flb flfciM W APX Preliminary specification BFQ292 PNP HDTV video transistor bTE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product 2 collector

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

philips MATV amplifiers

Abstract: CIL TRANSISTOR BFG621 PH* SOT223 transistor
Contextual Info: Philips Semiconductors 1^53^31 00314b7 IbT M APX Objective specification NPN 8 GHz wideband transistor BFG621 N AMER PHILIPS/DISCRETE FEATURES b'îE ]>' PINNING PIN • Low distortion DESCRIPTION • Gold metallization ensures excellent reliability 1 emitter