AS35BOS Search Results

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

B34 SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE jg smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE XI SMD marking B34 TLE4278G TLE4278 AED01546 AEP02113 SD 4278
Contextual Info: SIEMENS flE3SbOS □□'ìbfc.fig LSI 5-V Low -D rop Fixed V oltage R egulator TL E 4 278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output

transistor DA3 307

Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Contextual Info: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

Contextual Info: SIEMENS HYB 314171BJ-50/-60/-70 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJL-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Preliminary Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating tem perature

Contextual Info: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I

z58 diode

Contextual Info: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode

Q62703-Q1325

Contextual Info: SIEMENS 3 mm T1 LED, Diffused Besondere Merkmale • • • • • eingefärbtes, diffuses Gehäuse als optischer Indikator einsetzbar Lötspieße mit Aufsetzebene gegurtet lieferbar Störimpulsfest nach DIN 40839 Features • • • • • colored, diffused package

Siemens Halbleiter

Contextual Info: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16/P 8/16 Kbit 1024/2048 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode Data Sheet 1998-07-27 flEBSbDS D llT M T ? b ib SLx 24C08/16/P Revision History: Current Version: 1998-07-27

Siemens k1403

Abstract: SKM 181 R siemens Package Outlines P-LCC Q67100-H6562 ic ZN 415 SBGX skm 191 siemens si 200 LC Communication cable pin diagram k1403 marking kjd
Contextual Info: S IE M E N S S /T Bus Interface C ircuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T 1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

V10390

Abstract: C67078-A1607-A2
Contextual Info: ÌT T aaD D • ûEBSbDS oom b ? a 2 88D 14678 msiz g D BUZ 58 SIEMENS AKTIENûESELLSCHAF_ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description Case Type = 1000 V ^DS = 4,2 A h ^DS cn = 2,0 n SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit 1 2 8 /2 5 6 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode D atasheet 1998-07-27 fi535bQ5 DllTMMÔ TE? • \ SLx 24C01/02/P Revision History: Current Version: 1998-07-27

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type

Contextual Info: 13—T flñD D • fl235bOS GQlMbSb H ■ SIEG Ö8D 14696 D 7*^3«?^// w '1 BUZ 60 B — SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel a 400V Draln-source voltage l^ S = 4,5 A Continuous drain current /d Draln-source on-reslstance ^DS on) = 1,5 n

H3B SMD code

Abstract: BTS 131 SMD BTS 129 FC34 transistor smd H3b
Contextual Info: • 0235 bD 5 □ 1 0 3 3 ,ì 3 7HÖ SIEMENS T rilithIC BTS 774 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications

14A3

Abstract: C67078-A1402-A2
Contextual Info: i ÖÖD D • 023SbQS □ 0 m cJ3Q a « S I E G 88D 14930 D ' T m3 SF " / / BUZ 216 SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel Draln-source voltage K s Continuous drain current ij Draln-source on-reslstance ^ O S o n ) Description

Contextual Info: SIEMENS HITFET BTS 941 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage • Input Protection ESD On-state resistance • Thermal Shutdown Current limit Ò(lim) 6 A • Overload protection Nominal load current