AT 5543 Search Results

LTE 700Mhz Receiver

Abstract: saw LTE LTC5540 LTC5541 LTE Receiver LTC5543 LTC5542
Contextual Info: Electrical Specifications Subject to Change LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz High Input P1dB

LTC5543

Abstract: j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS
Contextual Info: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

LT5554

Abstract: LTC5540 LT5578 LTC5543 LTC5542 LT5570 LT5557 LT5568
Contextual Info: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

automotive ignition tip162

Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.

2N3716 MOTOROLA

Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 2N3716 Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A

CSM 6850

Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Contextual Info: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

Contextual Info: MILrC-39003 Military Style Tantalum Capacitors MIL-C-39003 DESIGN AND CONSTRUCTION D.C. LEAKAGE D C. leakage shall be measured using the dc rated voltage at ± 2 percent at the applicable test temperature, after a maximum electri­ fication period of 5 minutes. A 1,000-ohm resistor shall be placed in

Contextual Info: Or, Cell C ustom Service at 1-86B-548-6132 USA Only ADC701 SHC702 B U R R -B R O W N APPLICATIONS • CONVERSION RATE: to 512kHz Over Temp • NO MISSING CODES AT 16 BITS • SPURIOUS-FREE DYNAMIC RANGE: 107dB • LOW NONLINEARITY: ±0.0015% • SELECTABLE INPUT RANGES: ±5V, ±10V,

Contextual Info: Ordering number : EN*5543 CMOS LSI LC89051V iS A fÊ V O i Digital Audio Interface Receiver Preliminary Overview Package Dimensions The LC89051V is for use in IEC958 form at data transmission between digital audio equipment. This LSI is used on the receiving side, and handles synchronization

LT624

Abstract: lt6241 100v 30mA ROYAL FUSE mobile battery charger circuit using 7805 LT3478-1 LTC2351-14 reference accuracy ic 7805 TV Luxeon 3w rgb led circuit diagram 48v battery charger schematic diagram CS 213 Polymer protection
Contextual Info: LINEAR TECHNOLOGY JUNE 2007 IN THIS ISSUE… Cover Article SiGe Differential Amplifier Drives High Speed ADCs at Hundreds of MHz .1 Kris Lokere and Adam Shou VOLUME XVII NUMBER 2 SiGe Differential Amplifier

KDM1960Z

Abstract: ASPDM1960U
Contextual Info: • “S tr ip e s o f Quality” ISO 9001 Certificale Mo. 5543 C e l l u l a r /P C S D u a l -B a n d R o o f M o u n t A n t e n n a Models: ASPDM1960 series • Unique Whip Design - special phasing coil achieves true 3dB operation at both frequency bands

ysi 44031

Abstract: YSI 44018 YSI 400 thermistor mt 1389 de YSI 400 yellow springs thermistor 44907 YSI 44006 YSI 44007 YSI 4600 Precision Thermometer 44907 thermistor
Contextual Info: YSI Precision Thermistors & Probes Introduction Thermistor Components Special Test Services Configure to Order Probes YSI 400 and 700 Series Reusable Probes YSI 4600 Precision Thermometers Technical Information Thermistors at YSI YSI developed the first interchangeable thermistor

2sa1046

Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0

thermafilm

Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Contextual Info: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger

2SA1046

Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

ad7792 example code

Abstract: 135208865AN-202 ad7793 example code ad7794 internal temperature AD7792 AD7794 AD7795 AN-202 AN-311 AN-397
Contextual Info: AD779x Instrumentation Converters Frequently Asked Questions General FAQs What are the advantages and disadvantages of ∑-𝚫 ADCs? The penalty paid for the high resolution achievable with ∑-∆ technology has always been speed. The hardware has to operate at

sensorless pmsm c source code

Abstract: source code for park and clark transformation park and clark transformation RTC 1307 TEMPERATURE CONTROLLER with pid stm32 STM32-library STM32F103 TEMPERATURE CONTROLLER pid stm32 STM32F103C8 PMSM stm32
Contextual Info: Motor control with STM32 32-bit ARM -based MCU For 3-phase brushless motor vector drives December 2007 www.st.com/mcu Vector control made simple STMicroelectronics’ STM32 offers the performance of the industry-standard Cortex -M3 core at the service of

BU108

Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A

TIP34C equivalent

Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A

25203

Contextual Info: MKP 380 Vishay BCcomponents AC and Pulse Metallized Polypropylene Film Capacitors MKP Radial Potted Type APPLICATIONS Low losses due to low contact resistance and low loss dielectric make these products suitable for applications where high currents at high frequency occur or high stability

MIL-S-55433

Abstract: HSR-830RT HSR-069RT HSR-790WT HSR-190RT 808-0021 HSR-003DT HSR-740RT 808-0004 HSR102
Contextual Info: Hermetic Switch Reed Switches and Accessories See Us at www.hermeticswitch.com c ISO 9001 Certified Reed Switches 5 Highest quality reed switches feature contacts hermetically sealed in a protective atmosphere. Protected contacts mean reliable operation in wet, oily, dirty Ñ even explosive Ñ

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

MC34114P

Abstract: MC34114 34018 F232 GR12C
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MC34114 Speci fic at ion s and A p p l i c a t i o n s _ Inf ormation_ TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE SILICON MONOLITHIC INTEGRATED CIRCUIT

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A