AT-259 SOT143 Search Results

at259tr

Abstract: AT-259 AT-259TR M513 3RF22
Contextual Info: Voltage Variable Absorptive Attenuator 12 dB, DC-2.0 GHz Features • • • • • • • • AT-259 V4 Functional Schematic Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control: 0 to -4 Volts

AT-259-PIN

Contextual Info: Voltage Variable Absorptive Attenuator 12 dB, DC-2.0 GHz Features • • • • • • • • AT-259 V3 Functional Schematic Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control 0 to -4 Volts

Contextual Info: Voltage Variable Absorptive Attenuator DC-2 GHz AT-259 SOT-143 Features Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 |iW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40 'C to + 85"C

at259tr

Abstract: AT-259 AT-259RTR AT-259TR at-259 SOT143 AT-259PIN
Contextual Info: Voltage Variable Absorptive Attenuator DC - 2 GHz AT-259 V 2.00 SOT-143 Features ● ● ● ● ● ● ● ● Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed

AT-259TR

Abstract: SOT143 package AT-259 M513 3RF22 AT-259 SOT143
Contextual Info: AT-259 Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz Functional Schematic Features • • • • • • • • Rev. V5 Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 W Single Voltage Control: 0 to -4 Volts

at259tr

Contextual Info: AT-259 Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz Rev. V5 Functional Schematic Features • • • • • • • • M/A-COM Products Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 W Single Voltage Control: 0 to -4 Volts

Contextual Info: Voltage Variable Absorptive Attenuator DC-2 GHz SOT-143 Features • • • • • • • • AT-259 .0 8 3 - .10 4 _ 2 -1 0 - 2 - 6 4 _ _ Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 \x\N Single Voltage Control 0 to -4 Volts

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

MA4T64500

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels

Contextual Info: LLS3T31 DOlSbll S DEVELOPMENT DATA BCV64 This data sheet contains advance information and specifications are subject to change without notice. N ANER PHILIPS/DISCRETE DbE D SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.

BCV63

Abstract: BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor
Contextual Info: ^53^31 D E V E L O P M E N T D ATA DOlSbll 5 BCV64 T h is d a ta sheet c o n ta in s advance in fo rm a tio n a n d sp e c ific a tio n s are su b ject to c hange w it h o u t notice. N AMER PH IL IP S/ DISCR ETE ObE D SILICO N PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications.

smd transistor 312

Abstract: rf amplifier siemens 10 ghz SIEMENS MICROWAVE RADIO 8 GHz BGA310 BGA312 BGA318 Siemens MMIC Polytechnic diagram radar circuit SMX-1
Contextual Info: APPLICATIONS MMICs Gerhard Lohninger ● Knut Brenndörfer Jakob Huber ● Thomas Pollakowski Monolithic broadband amplifiers go mobile In wireless communications, there is a distinct trend toward more compact and lighter terminals. This means that the components used

MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

MA4T636500

Abstract: MA4T6365
Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

571LT1

Abstract: MBR571LT1 HW-XX sot-23 MARKING GU
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS571 M M BR571LT1 M RF5711LT1 The RF Line NPN Silicon High-Frequency TVansistors . . . designed fo r low noise, w ide dynam ic range front-end am plifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as w ell as

C3140

Abstract: C31408 c3140 datasheet ADM811 ADM812 mbg* sot143
Contextual Info: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC

TO-253-AA

Abstract: adm811
Contextual Info: a FEATURES Superior Upgrade for MAX811 Specified Over Temperature Low Power Consumption 5 mA Typ Precision Voltage Monitor: 3 V, 3.3 V, 5 V Options Reset Assertion Down to 1 V VCC 140 ms Min Power-On Reset Logic Low RESET Output Built-In Manual Reset Microprocessor Supervisory

t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

adm811

Contextual Info: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC

adm811

Contextual Info: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC

Contextual Info: Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811 Specified over Temperature Low Power Consumption 5 mA Typ Precision Voltage Monitor: 2.5 V, 3 V, 3.3 V, 5 V Options Reset Assertion down to 1 V VCC 140 ms Min Power-On Reset

ADM811

Abstract: ADM812 TO-253D C0009
Contextual Info: Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor: 2.5 V, 3 V, 3.3 V, 5 V Options Reset Assertion Down to 1 V VCC

adm811

Contextual Info: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital