AT49BV Search Results

AT49BV8004

Abstract: AT49BV8011 AT49BV8011T 8011T
Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout

Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

0925K

Abstract: AT49BV1604
Contextual Info: Errata Sheet V1.0 This Errata Sheet refers to: • The following datasheets: AT91F40816, Rev. 1384B–07/01 AT91X40 Series Datasheet, Rev. 1354C–06/01 AT91M40800 Electrical Characteristics, Rev. 1393B–10/01 AT49BV1604/1614 Flash Datasheet, Rev 0925K–09/00

specification of 8004 microprocessor

Abstract: AT49BV8004T
Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8011 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout

at91r4087

Abstract: AT91FR4081-33CI AT91FR4081 AT91X40 lv8011
Contextual Info: Errata Sheet V1.0 This Errata Sheet refers to: • The following datasheets: AT91FR4081 Summary, Rev. 1386B–07/01 AT91X40 Series, Rev. 1354C–06/01 AT91R4087 Electrical Characteristics Rev. 1367C–10/01 AT49BV/LV8011 Flash Memory, Rev 1265E–01/01 •

EN29LV640T

Abstract: AT49BV642DT
Contextual Info: Eon Silicon Solution Inc. Page 1/5 EN29LV640T/B V.S. AT49BV642DT Specification Comparison Part No. : EN29LV640T/B Issued date : 2008 / 09 / 24 Prepared by : FAE EngineerΚBrian Hsieh Approval by : FAE ManagerΚJason Tseng This Application Note may be revised by subsequent versions

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

AT91 TC CAPTURE

Abstract: AT91FR40162
Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation

lv8011

Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Contextual Info: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

7SDMM-B0-2211-A

Abstract: 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211
Contextual Info: SCH-VAL314x-01 00 NXP Semiconductors LPC314x Validation Board Schematics 1 05 Review cleanup and Layout quotation 07/20/08 01 REFDES re-ordered; Release for Assembly 08/14/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1

980020-48-P2

Abstract: 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et
Contextual Info: SCH-VAL313x-01 01 NXP Semiconductors LPC313x Validation Board Schematics 1 05 Initial release 09/29/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1 & GPIO2 to 4.7k; sht 7 01/22/09 04 Tie LPC313x pin K11 to SUP3;

Contextual Info: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation,

ATMEL 234

Abstract: how to derive sim 900 ARM926EJ-S AT91SAM ISO7816
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16-Kbyte Data Cache, 16-Kbyte Instruction Cache, Write Buffer

AT49LV040

Abstract: 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC
Contextual Info: Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time – 10 seconds

SMT6T15CA

Abstract: AT91M55800 diode b27 AT49BV16X4 AT91EB55 AT91M55800A qtz xtal sck 053 fuse box header 2x10 right angle AE20 DIODE
Contextual Info: AT91EB55 Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1 1.1 1.2

Contextual Info: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Contextual Info: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-by-byte Programming - 30 ns/Byte typical

Contextual Info: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical

Be 555

Contextual Info: Features • • • • • • • • • • Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks