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    Kyocera AVX Components 100A100JT150XT

    Silicon RF Capacitors / Thin Film 150volts 10pF 5%
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    Mouser Electronics 100A100JT150XT 2,241
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    Kyocera AVX Components 100A100JT150XT/500P REEL

    Silicon RF Capacitors / Thin Film 150volts 10pF 5%
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    TTI 100A100JT150XT/500P REEL Reel 500 500
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    Kyocera AVX Components 100A100JT150XTV

    Silicon RF Capacitors / Thin Film 150V 10pF Tol 5% Las Mkg Vertical
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    TTI 100A100JT150XTV Reel 500 500
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    ATC100A100JT150XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


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    PDF MRFG35020A MRFG35020AR1

    MRFG35003N6AT1

    Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and


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    PDF MRFG35020AR1 MRFG35020A

    MRFG35003ANT1

    Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003AN MRFG35003ANT1 MRFG35003ANT1 ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22

    GRM55DR61H106KA88B

    Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


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    PDF MRFG35020A MRFG35020AR1 GRM55DR61H106KA88B AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT

    A1156 TRANSISTOR

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35005AN MRFG35005ANT1 A1156 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003N6A MRFG35003N6AT1

    CPE 2-129

    Abstract: N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003AN MRFG35003ANT1 CPE 2-129 N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22

    ATC 1084

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003AN MRFG35003ANT1 ATC 1084 A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33

    FET 4900

    Abstract: MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35005AN MRFG35005ANT1 FET 4900 MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1

    ATC100A101JT150XT

    Abstract: atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


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    PDF MRFG35020A MRFG35020AR1 ATC100A101JT150XT atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1

    IrL 1540 N

    Abstract: atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35005AN MRFG35005ANT1 IrL 1540 N atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003AN MRFG35003ANT1

    atc 17-33

    Abstract: FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35005AN MRFG35005ANT1 atc 17-33 FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1