ATC100A1R5 Search Results

LM780L05ACM-ND

Abstract: PTFB193408SVV1R250XTMA1
Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input

IC 2030 schematic diagram

Abstract: 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

A113

Abstract: A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 3224w AN3263
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

Optimizing AT65-0009 for Communication Bandwidths

Abstract: 22 pf variable capacitor tuning capacitors ATC100A1R5 atc100a AT65-0009 ATC100 at650 ATC100A1
Contextual Info: MA-C-05010008A Application Note Optimizing AT65-0009 for Communication Bandwidths Introduction The AT65-0009 is a voltage variable attenuator in a plastic SOT package. The device performance has a broad bandwidth, 20% centered at 1000 MHz. It also has a large dynamic range - up to 28 dB of attenuation, high

Contextual Info: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS