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    ATC100A6R8BW Price and Stock

    American Technical Ceramics Corp ATC100A6R8BW150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000068 UF, SURFACE MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A6R8BW150XT 9,101
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.75
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    ATC100A6R8BW150XT 1,384
    • 1 $2.25
    • 10 $2.25
    • 100 $2.25
    • 1000 $0.945
    • 10000 $0.945
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    American Technical Ceramics Corp ATC100A6R8BW150X

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000068 uF, SURFACE MOUNT, 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A6R8BW150X 75
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
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    ATC100A6R8BW150X 7
    • 1 $13.776
    • 10 $9.184
    • 100 $9.184
    • 1000 $9.184
    • 10000 $9.184
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    Kyocera AVX Components 100A6R8BW150XT

    Silicon RF Capacitors / Thin Film 150volts 6.8pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100A6R8BW150XT Reel 1,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.6
    • 10000 $2.6
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    ATC100A6R8BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


    Original     		PDF NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    NE5550779A-T1

    Abstract: sma 906
    Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906