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    ATC100A6R8BW Search Results

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    American Technical Ceramics Corp ATC100A6R8BW150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000068 UF, SURFACE MOUNT
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    Quest Components () ATC100A6R8BW150XT 9,101
    • 1 $2.50
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    • 100 $2.50
    • 1000 $0.88
    • 10000 $0.75
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    ATC100A6R8BW150XT 1,384
    • 1 $2.25
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    • 100 $2.25
    • 1000 $0.94
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    American Technical Ceramics Corp ATC100A6R8BW150X

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000068 uF, SURFACE MOUNT, 0505
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    Quest Components () ATC100A6R8BW150X 75
    • 1 $4.50
    • 10 $2.25
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    ATC100A6R8BW150X 7
    • 1 $14.46
    • 10 $9.64
    • 100 $9.64
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    Kyocera AVX Components 100A6R8BW150XT

    Silicon RF Capacitors / Thin Film 150volts 6.8pF
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    TTI 100A6R8BW150XT Reel 5,500 500
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    • 1000 $2.52
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    ATC100A6R8BW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Contextual Info: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


    Original     		NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01 PDF

    R1766

    Contextual Info: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766 PDF

    ne5550

    Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550 PDF

    NE5550779A-T1

    Abstract: sma 906
    Contextual Info: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906 PDF