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    American Technical Ceramics Corp ATC100B102JWN50XC

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, 0.001 UF, SURFACE MOUNT, 1111
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    Quest Components ATC100B102JWN50XC 100
    • 1 $8.19
    • 10 $4.095
    • 100 $3.549
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    American Technical Ceramics Corp ATC100B102JP50X

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, 0.001 UF, SURFACE MOUNT, 1111
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    Quest Components ATC100B102JP50X 48
    • 1 $4
    • 10 $2.5
    • 100 $2.2
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    ATC100B102JP50X 3
    • 1 $2.5
    • 10 $2.3
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    American Technical Ceramics Corp ATC100B102JEG50X

    CAP 1000PF 50V 5%
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    Quest Components ATC100B102JEG50X 32
    • 1 $2.8
    • 10 $2.1
    • 100 $1.75
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    ATC100B102JEG50X 32
    • 1 $2.8
    • 10 $2.1
    • 100 $1.75
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    American Technical Ceramics Corp ATC100B102JRR50X

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, 0.001 UF, THROUGH HOLE MOUNT
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    Quest Components ATC100B102JRR50X 18
    • 1 $3.15
    • 10 $2.1
    • 100 $1.575
    • 1000 $1.575
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    American Technical Ceramics Corp ATC100B102JW50

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, 0.001 uF, SURFACE MOUNT, 1111
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    Quest Components ATC100B102JW50 6
    • 1 $4.05
    • 10 $2.7
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    ATC100B102J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    MCR50V107M8X11

    Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MD7P19130H MD7P19130HR3 MD7P19130HSR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6P21190HR6

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    T491C105K0

    Abstract: No abstract text available
    Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6P21190HR6 MRF6P21190HR6 T491C105K0

    MRFG35003N6AT1

    Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020AR1 MRFG35020A

    MRFG35003ANT1

    Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 MRFG35003ANT1 ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6

    Nippon capacitors

    Abstract: MRF6S19120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19120H IS--95 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H

    GRM55DR61H106KA88B

    Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1 GRM55DR61H106KA88B AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT

    TD-SCDMA

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 TD-SCDMA A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3