MRFE6VP6300HR3 Search Results

MRFE6VP6300HR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRFE6VP6300HR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 300W NI780-4	Original	PDF		15

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NXP Semiconductors MRFE6VP6300HR3 RF MOSFET LDMOS 50V NI780
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DigiKey	MRFE6VP6300HR3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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NXP Semiconductors MRFE6VP6300HR5 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
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Freescale Semiconductor MRFE6VP6300HR3 Transistors
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Vyrian	MRFE6VP6300HR3		1,429			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MRFE6VP6300HR3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
MRFE6VP6300 Abstract: MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 MRFE6VP6300 MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01	PDF
MRFE6VP6300H Abstract: MRFE6VP6300HR3 MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300H MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF