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Kyocera AVX Components 100B200FT500XT Silicon RF Capacitors / Thin Film 500volts 20pF 1%
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Mouser Electronics	100B200FT500XT					1 $13.11 10 $9.9 100 $7.85 1000 $6.99 10000 $6.99	Get Quote

ATC100B200FT500XT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with	Original	MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1	PDF
T491B476K016AT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications	Original	MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT	PDF
T491B476K016AT Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications	Original	MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT CRCW121015R0FKEA A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1	PDF
MRF6S9125N Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with	Original	MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 MRF6S9125N CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 PCN12895	PDF
300 watts power amplifier layout rms Abstract: capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with	Original	MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 300 watts power amplifier layout rms capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1	PDF