ATC600F3R0BT Search Results

transistor B 764

Abstract: ATC600F150JT250XT 0051A
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

ATC600F470BT250XT

Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

zener diode c18 st

Abstract: ASC050847D700N ATC600F3R0BT korin AS080447-33N BZX284C5V1 PPGPC003
Contextual Info: STEVAL-TDR033V1 RF power amplifier based on the PD85050S for mobile radio applications Data brief Features • Excellent thermal stability ■ Frequency: 896-941 MHz ■ Supply voltage: 12.5 V ■ Output power: 60 W ■ Gain: 10 dB min ■ Efficiency: 50% min

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

MRFE6S9046GN

Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with