ATC600F3R3BT250XT Search Results

ATC600F3R3BT250XT Price and Stock

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Kyocera AVX Components 600F3R3BT250XT Silicon RF Capacitors / Thin Film 250volts 3.3pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F3R3BT250XT		2,463			1 $1.06 10 $0.509 100 $0.461 1000 $0.461 10000 $0.461	Buy Now
TTI	600F3R3BT250XT	Reel	18,500		500	1 - 10 - 100 - 1000 $0.385 10000 $0.385	Buy Now

ATC600F3R3BT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHR3
MD8IC970NR1 Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	PDF	MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
gsc3 Abstract: GRM188R71C104K01D ATC600F4R7BT250XT Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	PDF	MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.	Original	PDF	MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	PDF	MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	PDF	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3
T491C106K050AT Abstract: ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	PDF	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H
T491C106K050AT Abstract: A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 ATC600F4R7BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	PDF	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HSR3 ATC600F4R7BT250XT
81A7031-50-5F Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	PDF	A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F
MRF8P23160WHSR Abstract: MRF8P23160WHR3 MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038 Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHSR MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6
ATC600S470JT250XT Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35 Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	PDF	MD8IC970N MD8IC970N MD8IC970NR1 ATC600S470JT250XT SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
MRF8P29300H Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6 MRF8P29300H ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT