ATC700A Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Resistor mttf

Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

MHVIC910HR2

Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Contextual Info: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

ATC700a

Abstract: vga to rgb sync MAX9539 MAX9540 19-0638 video graphic* controller sub-d 15 13 pins vga signal cable hd 26 d-sub ribbon RGBhv to
Contextual Info: 19-0638; Rev 0; 8/06 MAX9539/40 Evaluation Kit The MAX9539/40 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that contains one MAX9539 and one MAX9540 multisignal sync system. The MAX9539 is a video graphic sync adder and the MAX9540 is a video graphic sync

MRF5S9070NR

Contextual Info: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and

BLF7G3135L-350P

Abstract: ATC700A
Contextual Info: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 1 — 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

MwT-22Q4

Abstract: ATC100a101 ATC200B104 ATC700a ATC700A102 MWT22Q4
Contextual Info: MwT-22Q4 High Power, High Linearity Packaged FET Features • • • • Ideal for DC-4000 MHz High Power / High Linearity Applications Excellent RF Performance: o 33 dBm P1dB o 47 dBm IP3 o 16 dB SSG @ 2000 MHz o 40% PAE MTTF > 100 years @ Channel Temperature 150°C

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

MVM010

Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG
Contextual Info: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J

ATC100B160JT500XT

Abstract: ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Contextual Info: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

ALT1110

Abstract: MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

marking C8 amplifier

Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

RPE123

Abstract: RPE132 ATC200B EIA-198 murata ma28 331J COG 100 EIA-198 method 103 RPE131 ATC100E RPE121
Contextual Info: APPLICATION SPECIFIC CAPACITORS CATALOG C-29-B Please visit our website www.murata.com CONTENTS US Manufacturing Process Guide .1 Glossary of Specialized

MRF6S9060NBR1

Abstract: C1547 A114 A115 C101 JESD22 MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1 ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.