Untitled
Abstract: No abstract text available
Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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AUIRGP4063D
AUIRGP4063D-E
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AUGP4063D
Abstract: AUIRGP4063D IGBT 4000V AU406
Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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AUIRGP4063D
AUIRGP4063D-E
AUGP4063D
IGBT 4000V
AU406
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Untitled
Abstract: No abstract text available
Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C
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AUIRGP4063D
AUIRGP4063D-E
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Untitled
Abstract: No abstract text available
Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE AUIRGP4063D AUIRGP4063D-E C VCES = 600V Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C
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AUIRGP4063D
AUIRGP4063D-E
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