AUSI DIE ATTACH Search Results

TC701

Abstract: transistor RJH 30 nokia production line ausi die attach
Contextual Info: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004

AuSn eutectic

Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Contextual Info: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so

LND1

Contextual Info: LND1 Die Specifications LND1 G D S Backside: Source All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LND1 30 30 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.

solid solubility

Abstract: chemical control process block diagram
Contextual Info: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity

VF22

Contextual Info: VF22 Die Specifications VF22 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF22 105 70 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.

gold metal detectors

Abstract: soft solder die bonding schematic diagram intel atom INCOMING RAW MATERIAL INSPECTION lead side brazed hermetic X-RAY INSPECTION ausi die attach electrical three phase schematic riser DIAGRAM epoxy adhesive paste cte table intel 24008
Contextual Info: 2 3 Component Assembly Technology 1/22/97 9:49 AM CH03WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 3 COMPONENT ASSEMBLY TECHNOLOGY 3.1. INTRODUCTION The packaging technologies used to manufacture or assemble Intel’s three basic types of

Alumina ceramic AI203

Abstract: ausi die attach gold metal detectors AI203 gold melting furnace pressure low die attach spot welding schematics ausi die attach thin silicon die Dissolve Oxygen ceramic pin grid array package wire bond
Contextual Info: Alumina & Leaded Molded Technology 3 3.1 Introduction The packaging technologies used to manufacture or assemble three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity

gold metal detectors

Abstract: epoxy adhesive paste cte table 28 pin ic base socket round pin type lead spot welding schematics soft solder die bonding electrical three phase schematic riser DIAGRAM CERAMIC PIN GRID ARRAY wire lead frame ausi die attach thin silicon die soft solder wire dispensing 10 k ntc thermistor
Contextual Info: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity

Ultrasonic Cleaning Transducer

Abstract: Ultrasonic welding circuit diagram gold metal detectors ultrasonic transducer cleaning bath Ultrasonic nozzle schematic ultrasonic motion detector gold detectors circuit INCOMING RAW MATERIAL INSPECTION soft solder wire dispensing soft solder die bonding
Contextual Info: CHAPTER 3 IC ASSEMBLY TECHNOLOGY INTRODUCTION The material and process technology steps used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter The package families described in Chapter 1 provide the functional specialization and diversity required by our customers Material and construction attributes of individual family

ausi die attach

Contextual Info: LP07 Die Specifications LP07 G D Backside Potential: Drain6 All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LP07 50 70 Thickness 11 ± 1.5 Backside Metal None Material Al-Si Notes: 1. Maximum values

soft solder die bonding

Abstract: die bond VF-03 eutectic
Contextual Info: Die Specifications VF03 G S All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF03 146 118 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Cu-Si 15 x 20 Al 5 Au-Si Eutectic

VF13

Contextual Info: VF13 Die Specifications VF13 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF13 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 4x4

Contextual Info: VF26 Die Specifications VF26 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF26 70 70 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 4 x 6.25

Contextual Info: VF05 Die Specifications VF05 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF05 43 41 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 5x5

80021

Abstract: SLD1000
Contextual Info: Preliminary SLD1000 Product Description The SLD1000 is a 3.5W high performance LDMOS transistor die, designed for operation from 300MHz to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD1000 is typically used

Contextual Info: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz

UPG702B

Abstract: UPG702
Contextual Info: NEC UPG702B UPG702P 3-INPUT OR/NOR GATE FEATURES OUTLINE DIMENSIONS • LOGIC LEVELS AND SUPPLY VOLTAGES ECL COMPATIBLE Units in mm OUTLINE H16 • HIGH SPEED (Operating Clock Frequency beyond 2 GHz) • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

L3010

Abstract: UPG110B
Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER ~ p ~ ^ jj“ POWER GAIN vs. FREQUENCY FEATURES_ • WIDE-BAND: 2 to 8 GHz VDO - 8 ' / IDD • 6 0 tiA • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER : +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Si

6802P

Abstract: 6809P HD6809P HD6802P HD6802
Contextual Info: RELIABILITY T E S T D A T A OF M ICR O CO M PU TER 2. PACKAGE AND CHIP STRUCTURE 2.1 Package The reliability o f plastic m olded type has been greatly im ­ proved, recently their applications have been expanded to au to ­ m obiles m easuring and co n tro l system s, and co m p u ter term inal

Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG1 OOP FEATURES POWER GAIN AND NOISE FIGURE VS. FREQUENCY ULTRA W IDE BAND: 50 MHz to 3 GHz 10 LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f t HERMETIC SEALED PACKAGE ASSURES HIGH

mosfet high power rf ldmos

Abstract: mosfet 303 AN-039 80021
Contextual Info: Preliminary SLD2000 Product Description The SLD2000 is a 10W high performance LDMOS transistor die, designed for operation from 300MHz to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used

bf08

Abstract: UPG501B UPG501P prescaler ghz
Contextual Info: NEC 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES OUTLINE DIM ENSIONS • W ID E O PERATIN G FREQ UENC Y RANGE: fiN = 1.5 G Hz to 5 G Hz Ta = 25°C • SIN G LE SU PPLY VO LTAG E : V dd = + 10 UPG501B UPG501P (Units in mm) OUTLINE BF08 V 1.7 MAX • D IV IS IO N RATIO OF 4

101P

Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
Contextual Info: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l