UPG100
Abstract: UPG100B UPG100P ausi die attach
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY • WIDE OPERATING TEMPERATURE RANGE
|
Original
|
PDF
|
UPG100B
UPG100P
UPG100
24-Hour
UPG100B
UPG100P
ausi die attach
|
UPG100
Abstract: UPG100B UPG100P
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY • WIDE OPERATING TEMPERATURE RANGE
|
Original
|
PDF
|
UPG100B
UPG100P
UPG100
24-Hour
UPG100B
UPG100P
|
UPG101
Abstract: UPG100B UPG101B UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
|
Original
|
PDF
|
UPG101B
UPG101P
UPG101
24-Hour
UPG100B
UPG101B
UPG101P
|
C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
|
Original
|
PDF
|
UPC1677B
C1677
UPC1678B
C1678
UPG100B
UPG101B
UPG103B
24-Hour
C1678
c1677
UPC1678B
UPG100B
uPG101
MARKING 106
UPG101B
G100
G101
G103
|
UPG101B
Abstract: UPG100B UPG101 UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
|
Original
|
PDF
|
UPG101B
UPG101P
UPG101
24-Hour
UPG101B
UPG100B
UPG101P
|
Untitled
Abstract: No abstract text available
Text: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1
|
OCR Scan
|
PDF
|
UPG100B
UPG100B
3260Jay
|
UPG100A
Abstract: UPG100 UPG100B UPG100P
Text: SEC LOW NOISE WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG100A UPG100B UPG100P Units in mm OUTLINE B08 • U L T R A W ID E B A N D : 50 M H z to 3 G H z 1 .2 7 * 0.1 1.27 ± 0.1 • L O W N O IS E : 2 .7 d B T Y P at f = 50 M H z to 3 G H z ).4 (LEADS 1,3.5,7)
|
OCR Scan
|
PDF
|
UPG100A
UPG100B
UPG100P
UPG100
UPG100P
|
Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER i UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q • HERMETIC SEALED PACKAGE ASSURES HIGH
|
OCR Scan
|
PDF
|
UPG100B
UPG100P
UPG100
34-6393/FAX
|
Untitled
Abstract: No abstract text available
Text: NEC UPG100A UPG100B UPG100P LOW NOISE WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27+0.1 1.27±0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2.4,6.8) 0.6 • _0.4 (LEADS 1.3.5,7)
|
OCR Scan
|
PDF
|
UPG100A
UPG100B
UPG100P
UPG100
|
Untitled
Abstract: No abstract text available
Text: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES P O W ER G A IN A N D N O IS E F IG U R E vs. F R E Q U E N C Y • ULTRA WIDE BAND: 50 MHz to 3 GHz . LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q • HERMETIC SEALED PACKAGE ASSURES HIGH
|
OCR Scan
|
PDF
|
UPG100B
UPG100P
UPG100
|
Untitled
Abstract: No abstract text available
Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6
|
OCR Scan
|
PDF
|
UPG100B
UPG101B
UPG103B
UPG110B
UPG100P
UPG101P
flB08
UPG503B
UPG506B
|
UPG100B
Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Text: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)
|
OCR Scan
|
PDF
|
UPG100B
3260Jay
UPG100
UPG100P
power amplifier s band ghz mhz
Low Noise Amplifier 0.5 - 3.0 GHz
|
TI05D
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES_ POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f ì • HERMETIC SEALED PACKAGE ASSURES HIGH
|
OCR Scan
|
PDF
|
UPG100B
UPG100P
UPG100
TI05D
|
Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG1 OOP FEATURES POWER GAIN AND NOISE FIGURE VS. FREQUENCY ULTRA W IDE BAND: 50 MHz to 3 GHz 10 LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f t HERMETIC SEALED PACKAGE ASSURES HIGH
|
OCR Scan
|
PDF
|
UPG100B
UPG100P
UPG100
|
|
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
|
OCR Scan
|
PDF
|
UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
|
NEC Ga FET marking L
Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima
|
OCR Scan
|
PDF
|
GET-30749,
GET-30749
NE29200
NE674
uPG501B
uPG501P
uPG503B
uPG503P
uPG506B
NEC Ga FET marking L
tamagawa
gaas fet marking B
mmic amplifier marking code N5
NE272
FET marking code .N5
ne29200
NE23383B
NE292
gaas fet marking a
|
prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
|
OCR Scan
|
PDF
|
|
