AUSN EUTECTIC Search Results

Contextual Info: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible

Contextual Info: ADL-80Q11CZ AlGaAs Infrared Laser Diode DATE：2008/09/08 Ver 1.0 ★808nm 1W C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity Cathode tab (-) Alumina Insulator

Contextual Info: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio

AuSn eutectic

Abstract: AN3017 k-242 305O self-aligned AuSn solder
Contextual Info: Procedure for Multifunction Self-Aligned Gate MSAG AuSn Eutectic Solderability 1. AN3017 Rev — Introduction The following procedure is M/A-COM’s recommended instruction for eutecticly attaching die to pedestals 2. Materials/Supplies 2.1 The following are materials and supplies required to perform eutectic soldering.

tanaka TS3332LD epoxy

Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Contextual Info: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both

Contextual Info: ADL-63V06CZ AlGaInP Red Laser Diode DATE：2008/10/16 Ver 2.0 o ★635nm 0.5W 30 C CT-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity

AuSn solder

Contextual Info: V i s h ay I n t e rt e c h n olog y, I n c . I INNOVAT AND TEC O L OGY AuSn Series N HN LASER DIODE SUBSTRATE MOUNTS O 19 62-2012 Resistors - Deposited Gold Tin Thin Film Patterned Substrates with Deposited Gold/Tin Pads Key Benefits • • • • • •

DA3547

Abstract: AuSn eutectic ausn submount
Contextual Info: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

Contextual Info: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

Contextual Info: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

Contextual Info: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

Contextual Info: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

DA700

Abstract: OS4000
Contextual Info: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

DA1000

Contextual Info: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

405nm LED

Abstract: C470-XB900-A C470-XB900-B xbt-m silicon carbide LED cree bonding wire cree Au Sn eutectic C405-XB900-A C405-XB900-B CXXX-XB900-X
Contextual Info: G•SiC Technology XBright Power Chip LED CXXX-XB900-X ® The Leader in Silicon Carbide Solid State Technology Features Applications • XBright™ Technology • General Lighting • Larger “Power Chip” Design • White LEDs • High Performance

AuSn solder

Contextual Info: TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.2 A 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss

flux-eutectic

Abstract: UP78 silicon carbide LED Alpha Metals
Contextual Info: XBright & XThin® Au/Sn Die Attachment Recommendations XBright and XThin LEDs are the latest generation of solid-state light emitting diodes available from Cree. XBright and XThin chips use a geometrically shaped Epi-down chip design combined with InGaN epitaxy and Cree’s proprietary

AuSn eutectic

Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Contextual Info: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so

Contextual Info: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm

TGA2502

Abstract: 9948465 21A 8 BALL
Contextual Info: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm

TGA1073B-SCC

Contextual Info: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.2 A 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss

Contextual Info: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

WIRE SHEAR PULL MIL-STD

Abstract: Mil-Std-883 Wire Bond Pull Method 2011 PH25
Contextual Info: Application Note UMS GaAs Wafer Acceptance Tests This application note describes the tests performed by UMS in order to control and guarantee the overall quality of the GaAs MMIC wafers, prior to the individual chip measurement and individual visual inspection. These wafer acceptance tests consist in a