PH25 Search Results

PH2525L

Abstract: PH2625L PH5525L PH6325L TPS40071 LFPAK footprint NXP resistor
Contextual Info: NXP LFPAK MOSFETs PH2525L and PH5525L application 25-A POL converter with over 90% efficiency using LFPAK MOSFETs This small, low-cost design, which combines NXP MOSFETs in LFPAK packages with a PWM controller from Texas Instruments, uses industry-standard construction and operating conditions

PH2508

Contextual Info: DIODE 250A Avg 300~800 Volts •回路図 CIRCUIT 1 PH2503 PH2504 PH2508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. HTCT6X-6X 1.92 TAP 1 TAP 2 TAP 1 HTCT2-2 PH25 250-2 STR 4/0-2 FLEX 250-2 STR 4/0-2 FLEX PANDUIT HTCT250-2 PH25 PURPLE DIE 2-6 STR/SOL

PH2520U

Contextual Info: PH2520U N-channel TrenchMOS ultra low level FET Rev. 02 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

CHA2066-99S

Contextual Info: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)

Contextual Info: PH2525L N-channel TrenchMOS logic level FET Rev. 01 — 10 October 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

pHfet

Abstract: pseudomorphic HEMT PH25 power transistor gaas
Contextual Info: PH25 0.25µ µm Very Low Noise Process Very Low Noise and Medium Power PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.25µm gate length - GaAlAs/GaInAs/GaAs epitaxial active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs resistors

Contextual Info: ‘ ON 5-ñ H DATE m. f t REV. 8 ÿ 16 0 I PS w. s ñ 3 DESCRIPTIO N DON NO. m m DR. a $ m APPD. m CHK. & u APPD. ONIMVÜQ -¡S-#f f l El 36.5 [ 40751 ±0. 154-0.1 5 m 4- 0.1 ( SMT ( 43 ) |3 9 . 5 1| |3 4 . 4 9| 3 0.5 05 PH251 A ARE A ) KEY .2 5 LOT NO.

PH2503

Abstract: PH2504 PH2508
Contextual Info: DIODE 250A Avg 300~800 Volts •回路図 CIRCUIT 1 PH2503 PH2504 PH2508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

PH2520U

Contextual Info: PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PH2525L

Contextual Info: PH2525L N-channel TrenchMOS logic level FET Rev. 02 — 5 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

PH2520U

Abstract: 11406
Contextual Info: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .

Contextual Info: ＤＩＯＤＥ •回路図 250Ａ Ａvg 800 Ｖolts CIRCUIT ■外形寸法図 PH2508 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 非くり返しピーク逆電圧

PH2503

Abstract: PH2504 PH2508
Contextual Info: DIODE MODULE 250A/300 to 800V PH2503,PH2504,PH2508 OUTLINE DRAWING FEATURES * Isolated Base * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reverse Voltage

tea1719

Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
Contextual Info: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,

dale non-inductive resistor

Abstract: PH100 PH25 PH-10-1
Contextual Info: A COMPANY OF MODEL PH W irewound Resistors Precision Power Aluminum Housed, Thru-Chassis Mount FEATURES • Complete welded construction • Complete environmental protection • Designed to utilize heat-sink effect of chassis • Plug-in connections available for quick connect/disconnect from circuit

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

gaas Low Noise Amplifier

Abstract: MONOLITHIC AMPLIFIERS LNAVGA-P09091 PH25 United Monolithic Semiconductors
Contextual Info: PRESS RELEASE New Products Announcement Date : 19/04/2001 Author : Marketing group United Monolithic Semiconductors releases a new monolithic low noise and variable gain amplifier To Business editors/High tech Writers th ORSAY , April 19 , 2001 Team Focus : Standard Products

PH17

Abstract: transistor ph27 transistor ph18 pin diagram for quad core i7 processor MARKING PH12 PH23 PH26 1010 OEI MARKING PH24 NFC ferrite
Contextual Info: Electronics Semiconductor Division TMC2340A Digital Synthesizer Dual 16 Bit, 50 Msps Features • User-configurable phase accumulator for waveform synthesis, frequency modulation or phase modulation • Amplitude input for amplitude modulation and gain adjustment

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: LCD Heat Guns Compact, Light Weight, Easy-to-Use Professional Quality Electronic Heat Guns Master Model PH-1500/PH-2500 • Programmable or dial-in • Rugged, ergonomic settings. Powerful, heat guns with digital accurate, controllable display of temperature

AM1 marking

Abstract: TMC2340AKEB AM-140 PIN equivalent fairchild h11 amplitude modulation block diagram PH10 PH20 PH23 PH25 PH31
Contextual Info: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm TMC2340 A Digital S ynthesizer Dual 16 B i t , 30 M s p s , I n d u s t r i a l a n d M i l i t a r y T e m p e r a t u r e R a n g e s A new data word pair is available at the output every clock

45M10

Abstract: PH27 marking MARKING PH12 PH15 PH17 PH31 TMC2340 TMC2340A PH-27
Contextual Info: FAIRCHILD S E M IC O N D U C T O R www.fairchildsemi.com tm TMC2340A Di g i t a l S y n t h e s i z e r Dual 16 B i t , 50 M s p s Features • User-configurable phase accumulator for waveform synthesis, frequency m odulation or phase modulation • Am plitude input for am plitude m odulation and gain