edge emitter LED
Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
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OT323
ZUMT413
20MHz
10KHz
edge emitter LED
AVALANCHE TRANSISTOR
avalanche
LED driver 110V
4.7nF
base, collector, emitter
partmarking 6 C
ZUMT413
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ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
200mA
620pF
100mA
20MHz
100MHz
ZTX415
transistor 200V 100MA NPN
AVALANCHE TRANSISTOR
DSA003766
3171 i.c
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
100mA
200mA
620pF
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FMMT415
Abstract: No abstract text available
Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation
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FMMT415
FMMT417
100mA
200mA
FMMT415
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K1 transistor
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.
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FMMT413
J-STD-020
MILSTD-202,
DS33083
K1 transistor
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
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FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
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Untitled
Abstract: No abstract text available
Text: FSL116HR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V) Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI Internal Startup Circuit The FSL116HR integrated Pulse Width Modulator
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FSL116HR
FSL116HR
265VAC,
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Untitled
Abstract: No abstract text available
Text: FSL116HR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V) Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI Internal Startup Circuit The FSL116HR integrated Pulse Width Modulator
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FSL116HR
265VAC,
FSL116HR
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Untitled
Abstract: No abstract text available
Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V) Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator
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FSL116LR
FSL116LR
265VAC,
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FSL116LR
Abstract: No abstract text available
Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description Internal Avalanche-Rugged SenseFET (650V) Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator
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FSL116LR
265VAC,
FSL116LR
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FSL116LR
Abstract: No abstract text available
Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V) Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator
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FSL116LR
265VAC,
FSL116LR
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AVALANCHE TRANSISTOR
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators
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OCR Scan
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PDF
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100hA
ZTX413
20MHz
AVALANCHE TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
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OCR Scan
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PDF
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001G35S
|
Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
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OCR Scan
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PDF
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FMMT413
FMMT413
7057fl
20MHz
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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OCR Scan
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PDF
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1070perations
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IRF350R
Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
Text: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated
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OCR Scan
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PDF
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IRF350R,
IRF351R,
IRF352R,
IRF353R
50V-400V
92CS-426M
IRF352R
IRF353R
IRF350R
IRF350
IRF351R
transistors bipolar
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F110F
Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
Text: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated
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OCR Scan
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PDF
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Number2022
IRFF110R,
IRFF111R
IRFF112R,
IRFF113R
0V-100V
tICS-41111
IRFF111R,
IRFF112R
F110F
SK 6211
TD-205A
flower in the rain
IRFF110R
IRFF113R
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FMMT415
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR AVALANCHETRANSISTOR F M M T 4 1 5 F M M T 4 1 7 ISSU E 4 -OCTOBER 1995 O FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation
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OCR Scan
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PDF
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FMMT415
FMMT417
FMMT417
FMMT415
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IRFP450R
Abstract: IRFP IRFP 450 application IRFP45O IR mosfets IRFP P CHANNEL MOSFET transistor irfp IRFP451R IRFP452R IRFP453R
Text: Rugged Power MOSFETs File N u m b er 2018 IRFP450R, IRFP451R IRFP452R, IRFP453R Avalanche Energy Raited N-Channel Power MOSFETs 12A and 13A, 450V-500V rDs on = 0.40 and 0.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited
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OCR Scan
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PDF
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IRFP450R,
IRFP451R
IRFP452R,
IRFP453R
50V-500V
92CS-42638
IRFP451R,
IRFP452R
IRFP453R
IRFP450R
IRFP
IRFP 450 application
IRFP45O
IR mosfets
IRFP P CHANNEL MOSFET
transistor irfp
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F421
Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
Text: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated
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OCR Scan
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PDF
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IRFF420R,
IRFF421R,
IRFF422R,
IRFF423R
50V-500V
IRFF422R
IRFF423R
92CS-42660
F421
IRFF420R
IRFF421R
nanosecond pulse generator
avalanche pulse generator
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IRF840R
Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Text: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated
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OCR Scan
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PDF
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IRF840R,
IRF841R
IRF842R,
IRF843R
00V-400V
IRF841R,
IRF842R
IRF843R
92CS-42659
IRF840R
RF840
IRF840
M2R DIODE
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circuits of IRF150
Abstract: IRF150-152
Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*
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OCR Scan
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PDF
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IBM50/151/152/153
IRF150R/151R/152R/153R
IRF150,
IRF151,
IRF152,
IRF153
IRF150R,
IRF151R,
IRF152R,
IRF153R
circuits of IRF150
IRF150-152
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IR LFN
Abstract: mosfet 350v 10A IRFP340R IRFP341R IRFP342R IRFP343R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a
Text: Rugged Power MOSFETs. IRFP340R, IRFP341R, IRFP342R, IRFP343R File Number 2088 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDs on = 0.550 and 0.800 N -C H A N N E L E N H A N C E M E N T M O D E Feature«: • Single pulse avalanche energy rated
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OCR Scan
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PDF
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IRFP340R,
IRFP341R,
IRFP342R,
IRIFP343R
IRFP342R
IRFP343R
92CS-4265Â
IR LFN
mosfet 350v 10A
IRFP340R
IRFP341R
power mosfet 350v to 247
irfip341r
N-channel MOSFET to-247 50a
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IIRF743R
Abstract: IRF740R IRF741R IRF742R IRF743R
Text: Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R File Number 2033 Avalanche Energy Rated N-Channel Power M OSFETs T E R M IN A L D IA G R A M 10A and 8A, 400V-300V rDs on = 0.550 and 0.80 D Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited
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OCR Scan
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PDF
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IRF740R,
IRF741R
IRF742R,
IRF743R
00V-300V
IRF741R,
IRF742R
IIRF743R
F742R
IRF740R
IRF743R
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