AX184 Search Results

1N414R

Abstract: op27 MAX104 MAX183 MAX185 ad711 W418 LF400
Contextual Info: MAXI83/184/185 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t ABSOLUTE MAXIMUM RATINGS V d d to D G N D . V s s to D G N D .+ 0 .3 V to

1N414R

Abstract: MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316
Contextual Info: 19-3127; Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t _ F e a tu re s T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b i t , h i g h - s p e e d , B iC M O S , a n a lo g - to - d ig ita l c o n v e rte rs A D C s th a t

Contextual Info: O K I semiconductor MSM27512ZB 65,536-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION T he M S M 27512Z B is a 65,536-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27512Z B is m anufactured by the N channel double silicon gate M OS technology and is

Contextual Info: O K I semiconductor MSM27256ZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27256ZB is a 32,768-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27256Z B is m anufactured by the N channel double silicon gate M O S technology and is

27C256H-55

Abstract: 27C256H-70 MAX184 MAX525 MSM27C256 MSM27C256H MSM27C256H-55 MSM27C256H-70
Contextual Info: O K I semiconductor MSM27C256H 32,768-Word x 8-Bit UV EPROM G E N E R A L D ESC R IPTIO N The M S M 27C 256H is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. T he M S M 27C 256H is m anufactured by the CM O S double silicon gate

M271000

Contextual Info: O K I semiconductor MSM271000 131,072-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 271000 is a 131,072-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 271000 is m anufactured by the N channel double silicon gate M OS

MSM2764AZB

Abstract: 2764AZB M2764AZB
Contextual Info: O K I semiconductor MSM2764AZB 8,192-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M SM 2764AZB is an 8,192-w ord x 8-bit electrically program m able read-only m em ory. The M S M 2764A ZB is m anufactured by the N channel double silicon gate M OS technology and is

SOIC24

Contextual Info: ENGLISH • ? • ? • ? WHAT'S NEW PRODUCTS SOLUTIONS DESIGN APPNOTES SUPPORT BUY COMPANY MEMBERS M axim > P roduc ts > A nalog-to-Digital C onverters MAX183, AX184, MAX185 3s, 12-Bit ADC See MAX1294 - MAX1297 for Single-Supply Applications QuickView

MAX1004

Abstract: MX7582
Contextual Info: A/D Converters Ultra-High-Speed Conversion d p s 4 Bits Fast Conversion (<100ps) (SAR/Flash A D C s) 8 Bits External T/H — 10 Bits Single Channel see next page for Slow Conversion (>1 Oms) 12 Bits Single Channel - 14 Bits Single Channel 16 Bits Internal T/H

AN 7145 M circuit power amplifier

Abstract: LF400 MAX163 MAX183 MAX183ACNG MAX183BCNG MAX184 MAX185 10nf electrolytic capacitor IS51V
Contextual Info: yi/iyjxjyi/i 19-3127: Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te r n a l R e fe r e n c e In p u t T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b it, h ig h - s p e e d , B iC M O S , a n a lo g - to -d ig ita l c o n v e rte rs A D C s th a t

271024

Abstract: EPROM 271024 12.75V PGM MAX184 MAX630 MSM271024-15
Contextual Info: O K I semiconductor MSM271024 65,536-Word x 16-Bit UV EPROM G E N E R A L D ESC R IPTIO N The M S M 271024 is a 65,536-w ord x 16-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 271024 is m anufactured by the N channel double silicon gate M OS

2764A-15

Contextual Info: O K I semiconductor MSM2764A 8,192-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 2764A is an 8 ,1 92-word x 8-bit ultraviolet erasable and electrically programmable read­ only memory. The M SM 2764A is manufactured by the N channel double silicon gate MOS

M27256ZB

Abstract: 27256Z
Contextual Info: O K I semiconductor MSM27256ZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27256Z B is a 32,768-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27256Z B is m anufactured by the N channel double silicon gate M OS technology and is

Contextual Info: O K I semiconductor MSM271024ZB 65,536-Word x 16-Bit ONE TIME PROM GENERAL DESCRIPTION T he M S M 271024Z B is a 65,536-w ord x 16-bit electrically program m able read-only m em ory. The M S M 271024Z B is m anufactured by the N channel double silicon gate M OS technology and is

LF400

Contextual Info: 19-3127, Rev.O; 4/91 J V \J V X \J V \ H igh-S peed 12-B it A/D C o nverters W ith E x te rn a l R e fe re n c e In p u t _ F eatures ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current

Contextual Info: O K I semiconductor MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27C 256H ZB is a 32,768-w ord x 8-bit electrically program m able read-only memory. The M S M 27C 256H ZB is m anufactured by the CM O S double silicon gate technology and is

EPROM 2764a

Abstract: MAX184 MAX525 MSM2764A MSM2764A-12 MSM2764A-15 MSM2764A-20 MSM2764A-25 2764A1
Contextual Info: O K I semiconductor MSM2764A 8,192-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 2764A is an 8 ,1 92-w ord x 8-bit ultraviolet erasable and electrically program m able read­ only m em ory. The M SM 2764A is m anufactured by the N channel double silicon gate M OS

MAX184

Abstract: MAX525 MSM27256-15 MSM27256-20 MSM27256-25
Contextual Info: O K I semiconductor MSM27256 32,768-Word x 8-Bit UV EPROM GENERAL DESCRIPTION T he M SM 27256 is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read­ only m em ory. The M SM 27256 is m anufactured by the N channel double silicon gate MOS

msm27256

Contextual Info: O K I semiconductor MSM27256 32,768-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27256 is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read­ only m em ory. The M SM 27256 is m anufactured by the N channel double silicon gate M OS