B P1 TRANSISTOR Search Results

B P1 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

B P1 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FCX591 Abstract: FCX491 FMMT591 DSA003685 Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage	Original	FCX591 FCX491 -500mA, -50mA* -100mA* -50mA, 100MHz FMMT591 FCX591 FCX491 DSA003685	PDF
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage	Original	FCX591 FCX491 -500mA, -50mA* -100mA* -50mA, 100MHz FMMT591	PDF
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FCX591 ✪ ISSUE 3 - NOVEMBER 1995 C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage	Original	FCX591 FCX491 Vo-100 -500mA, -50mA* -100mA* -50mA, 100MHz	PDF
2SK1283 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC M MOS FIELD B S EFFECT POWER TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1283 IEI-1209) MEI-1202 TEA-1035	PDF
2SK1289 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD NEC ^ • B ! EFFECT POWER TRANSISTOR 2SK1289 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1289 IEI-1209) MEI-1202 TEA-1035	PDF
2SK1749 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC M B MOS FIELD i EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1749 2SK1749 IEI-1209) MEI-1202 TEA-1035	PDF
2SK1852 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC J H B DATA SHEET M OS FIELD EFFECT POWER TRANSISTOR 2SK1852 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	2SK1852 IEI-1209) MEI-1202 TEA-1035	PDF
TNR10SE621 Abstract: TNR10SE tnr10se271 tnr 221 TNR12H220K varistor tnr tnr10se271k TNR15H220K TNR20V471K TNR Varistor Contextual Info: SURGE ABSORBERS METAL OXIDE VARISTORS TNR R TNR Series Taping Specification • The Specifications for TNR C Series Dimensions(mm) Size ±0.1 B± ± 0.1 W± ±0.3 F± ±0.1 E± ±0.1 P1±0.1 P2±0.1 P3±0.1 ΦD0+0.10 TMax. T2Max. ΦD1Min. A± code	Original	TNR5C220K470K, TNR5C820K271K TNR5C560K, TNR32E TNR20E TNR10SE621 TNR10SE tnr10se271 tnr 221 TNR12H220K varistor tnr tnr10se271k TNR15H220K TNR20V471K TNR Varistor	PDF
HT17E11-300 Abstract: Hyundai HT17E11 lcd hyundai EZ 0302 ecn 1310 CN24 THC63LVDM83A BHSR-02VS-1 equivalent Contextual Info: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS A N D S H A L L N O T B E REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HEI AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST. TITLE: HT17E11-300 Preliminary Product Specification Rev. P1 Hyundai Display Technology, Inc.	Original	HT17E11-300 S864-1080 Hyundai HT17E11 lcd hyundai EZ 0302 ecn 1310 CN24 THC63LVDM83A BHSR-02VS-1 equivalent	PDF
Contextual Info: g iiK « mm h l j \| b i t M »» a t i gMk E N 3 ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC-LH PEB 2255 Version 1.1 Preliminary Data Sheet 05.97 T2255-XV11-P1 -7600 PEB 2255 Revision History: Current Version: 05.97	OCR Scan	T2255-XV11-P1 P-MQFP-80-1 120IA-BiDTCl8Ox 2IA-BIDI80x 2IA-BIDIH14x	PDF
k 2645 MOSFET Abstract: MAX1536 MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink Contextual Info: LCJ/JH 9/22/05 P1 KIT ATION EVALU E L B A IL AVA 19-2729; Rev 1; 8/05 3.6A, 1.4MHz, Low-Voltage, Internal-Switch StepDown Regulator with Dynamic Output Voltage Control The MAX1536 constant-off-time, pulse-width-modulated (PWM) step-down DC-to-DC converter is ideal for use in	Original	MAX1536 MAX1536 k 2645 MOSFET MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink	PDF
MC3386 Abstract: MLM311 MLM339 MLM2901 transistor 2028 MLM139 CASE-646 MC3302 MC1414 MC1514 Contextual Info: Gnd 1 C 3 8 2C □ 7 O u tp u t In p u ts V EE g £ 4 C □ 6 B a la n c e / S tr o b e □ B a la n c e 5 MC330Z MLM239 MLM239A - 4 0 to 85°C L Suffix — Case 632 P Suffix — Case 646 MLMI311 0 to 70°C G Suffix — Case 601 L Suffix — Case 632 P1 Suffix — Case 626	OCR Scan	MLM111 MLM211 MLM311 MLM111 MLM211 MLM311 MC1514 MC1414 MC3301 MG3302 MC3386 MLM339 MLM2901 transistor 2028 MLM139 CASE-646 MC3302 MC1414 MC1514	PDF
MLM2902 Abstract: MC3386 mlm324 MC4141 MLM311 MC1709 MC1437 MC4741 MC1537 MC4202 Contextual Info: G nd 1 C 3 8 2 C □ 7 O u tp u t In p u ts V EE g £ 4 C □ 6 B a la n c e / S t r o b e □ B a la n c e 5 MC330Z MLM239 MLM239A - 4 0 to 85°C L Suffix — Case 632 P Suffix — Case 646 MLMI311 0 to 70°C G Suffix — Case 601 L Suffix — Case 632 P1 Suffix — Case 626	OCR Scan	MLM111 MLM211 MLM311 MLM111 MLM211 MLM311 MC1514 MC1414 MC3471 MC4202C MLM2902 MC3386 mlm324 MC4141 MC1709 MC1437 MC4741 MC1537 MC4202	PDF
Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# FCX591 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A	Original	FCX591 FCX491 OT-89 100uAdc, 10mAdc, 60Vdc) 100mA 50mAdc,	PDF

23P transistor sot 23 Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d Contextual Info: Unit:mm Reel type A B ＣＤ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code	Original	12-mm G300721H02 MTE1208G-8P2S-A MTE1208H-8P2J OT-89 PLZZ0004CB-A PRSP0008DA-B PTSP0008JA-A TSOT89 TE1208-5P, 23P transistor sot 23 PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d	PDF
TIP147T Abstract: TIP140T TIP141T TIP142T TIP145T TIP146T PI46T Contextual Info: Datasheet T I P I AO T TI P 1 41 T T I P 1 4 2 T NPN T I P 1 4 5 T T I P I 46T T I P I 47T PNP G G IK ifl 1 Sem iconductor Corp. S I L I C O N POWER DARLINGTON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824	OCR Scan	TIP140T TIP141T TIP142T TIP145T TIP147T T0-220 TIP140T, TIP142T TIP146T PI46T	PDF
transistor c3909 Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
transistor p14 Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8 Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.	Original	LM2940 19-May-2005 transistor p14 P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8	PDF
Contextual Info: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0360NB25A T0360NB25A	PDF
T0360NB25A Abstract: igbt1 T0360NB T0360 Contextual Info: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0360NB25A T0360NB25A igbt1 T0360NB T0360	PDF
MUN2111RT1 Abstract: MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and	Original	MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1	PDF
Reverse polarity relay 24vdc Abstract: reverse polarity relay 12vdc S312T double polarity relay 12vdc S312N relay 12vdc S312 relay 12vdc with diode relay 12 volt relay Contextual Info: Hoyles Electronic Developments Ltd. Unit 3 Millbrook Business Park, Mill Lane, Rainford, St Helens, WA11 8LZ HED Tel: 01744 886600 S312 Series Interface Relays Website: www.hoyles.com Fax: 01744 886607 +ve These transistorised relays are designed as Fig 4	Original	30vdc 120vac S312P S312T \elec\corelec\instrn\60071 Reverse polarity relay 24vdc reverse polarity relay 12vdc S312T double polarity relay 12vdc S312N relay 12vdc S312 relay 12vdc with diode relay 12 volt relay	PDF
6B22 Abstract: MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 Contextual Info: Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and	Original	MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 6B22 MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1	PDF

B P1 TRANSISTOR Search Results

B P1 TRANSISTOR Result Highlights (5)

B P1 TRANSISTOR Datasheets Context Search

FCX591

2SK1283

2SK1289

2SK1749

2SK1852

TNR10SE621

HT17E11-300

k 2645 MOSFET

MC3386

MLM2902

23P transistor sot 23

TIP147T

transistor c3909

transistor p98

transistor p14

T0360NB25A

MUN2111RT1

Reverse polarity relay 24vdc

6B22