Untitled
Abstract: No abstract text available
Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter
|
Original
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
|
tip141 equivalent
Abstract: TIP140 TIP141 TIP142 TIP145T TIP146T TIP147T tip142 equivalent
Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
tip141 equivalent
TIP140
TIP141
TIP142
TIP145T
TIP146T
TIP147T
tip142 equivalent
|
147T
Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
TIP145T/146T/147T
147T
TIP147T
"Darlington Transistor"
TIP146T
darlington power transistor 10a
pnp darlington to-220 10a
TIP145T
|
TIP142T
Abstract: gto 5A NPN Transistor TO220 VCEO 60V IC 5a TIP140T TIP141T US Global Sat
Text: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T
|
Original
|
PDF
|
TIP140T
TIP141T
TIP142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
gto 5A
NPN Transistor TO220 VCEO 60V IC 5a
US Global Sat
|
Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T 1 TO-220 PNP Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
|
tip142
Abstract: TIP140T TIP141T TIP142T 141T
Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter
|
Original
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
tip142
TIP140T
TIP141T
TIP142T
141T
|
Untitled
Abstract: No abstract text available
Text: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T
|
Original
|
PDF
|
TIP140T
TIP141T
TIP142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
|
NPN Transistor TO220 VCEO 60V IC 5a
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A TO-220 MONOLITHIC CONSTRUCTION IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS Characteristic
|
Original
|
PDF
|
TIP140T/141T/142T
O-220
TIP145T/146T/147T
TIP140T
TIP141T
TIP142T
NPN Transistor TO220 VCEO 60V IC 5a
|
142T
Abstract: No abstract text available
Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T 1 TO-220 NPN Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
142T
|
Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
TIP145T/146T/147T
|
TIP147T
Abstract: TIP145T TIP146T
Text: TIP145T/146T/147T TIP145T/146T/147T ◎ SEMIHOW REV.A0,Oct 2007 TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140/141/142
TIP145T
TIP146T
TIP147T
TIP147T
TIP145T
TIP146T
|
Untitled
Abstract: No abstract text available
Text: s., Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP145T Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: h FE =1000(Min)@l c =-5A • Collector-Emitter Sustaining Voltage-
|
Original
|
PDF
|
TIP145T
-40mA
|
Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter
|
Original
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
|
NPN Transistor VCEO 80V 100V
Abstract: tip141 equivalent TIP140 TIP140T TIP141 TIP141T TIP142 TIP142T tip142 equivalent
Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter
|
Original
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
NPN Transistor VCEO 80V 100V
tip141 equivalent
TIP140
TIP140T
TIP141
TIP141T
TIP142
TIP142T
tip142 equivalent
|
|
|
fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
|
Original
|
PDF
|
O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
|
k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
|
Original
|
PDF
|
MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
|
BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
|
Original
|
PDF
|
2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
|
2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
|
Original
|
PDF
|
2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
|
Untitled
Abstract: No abstract text available
Text: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN
|
OCR Scan
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
TIP140T,
TIP141T
TIP142T
T0-220
aretheTIP145T
TIP146T
andTIP147T
|
tlp142
Abstract: P145T T1p147T T1P147 TlP142T TIP140T TIP141T TIP142T TIP145T TIP146T
Text: ÆàMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP TIP140T TIP145T TIP141T TIP146T TIP142T TIP147T .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - TIP140T.TIP145T
|
OCR Scan
|
PDF
|
TIP140T
TIP145T
TIP141T
TIP146T
TIP142T
TIP147T
tlp142
P145T
T1p147T
T1P147
TlP142T
TIP145T
TIP146T
|
TIP 41 transistor
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
TIP 41 transistor
|
GE636
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T
|
OCR Scan
|
PDF
|
TIP145T/146T/147T
TIP140T/141T/142T
GE636
|
T1P142T
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICO N DARLINGTON TRAN SISTO R TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E Complement to TIP145T/146T/147T
|
OCR Scan
|
PDF
|
TIP140T/141T/142T
TIP145T/146T/147T
TIP140T
TIP141T
TIP142T
T1P142T
|
TIP146T
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICO N DARLINGTON TRANSISTO R TIP145T/146T/147T HIGH DC CU RREN T GAIN - MIN hFE = 1000 @ Vce = -4V, IC = -5 A TO-220 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S I S T O R S IN D U S T R IA L U S E Com plem ent to T IP140T/141T/142T
|
OCR Scan
|
PDF
|
TIP145T/146T/147T
IP140T/141T/142T
O-220
TIP146T
|
