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    B1016A Datasheets Context Search

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    B1016A

    Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)


    Original     		2SB1016A 2SD1407A 2-10R1A B1016A PDF

    2SB1016A

    Abstract: B1016 B1016A
    Contextual Info: B1016A 東芝トランジスタ シリコンPNP三重拡散形 B1016A ○ 電力増幅用 単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項 目 記 号 定


    Original     		2SB1016A 2-10R1A 20070701-JA 2SB1016A B1016 B1016A PDF

    B1016A

    Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A
    Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)


    Original     		2SB1016A 2SD1407A B1016A 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A PDF

    2SB1016A

    Abstract: 2SD1407A B1016A
    Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)


    Original     		2SB1016A 2SD1407A 2SB1016A 2SD1407A B1016A PDF