B26G Search Results

MBRS260T3

Abstract: MBRS260T3G
Contextual Info: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: Modular Jack SPECIFICATIONS Mechanical JFM 10G Series RJ45 2X8 R/ A T/ H Type 1.27mm [.050”] Pitch 10G Base- T Mating Force: 5Pounds max. Unmating Force: 10Pounds max. Durability: 1000 Cycles Electrical Voltage Rating: 125VAC Current Rating: 1.5A max. Contact Resistance: 60mΩ max.

Contextual Info: Technical Information 2PS1200R17KE3-4G PrimeSTACK Vorläufige Daten preliminary data Key data 1x 571A AC at 690V AC, forced air fan not implemented General information for: Stacks for various inverter application. Semiconductors, heat sinks, drivers and sensors included.

MBRS260T3G

Abstract: B26G
Contextual Info: MBRS260T3G, NRVBS260T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBRS260T3G

Abstract: B26G MBRS260T3
Contextual Info: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

76M12

Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
Contextual Info: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

MBRS260T3G

Abstract: MBRS260T3
Contextual Info: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: 234567489AB6CDEF87D6 E7F32  11 123456789ABCDEAF 3A488FD3BDED ABDED BBB3BDEBB1B3B723ABD83B7DFB8F46A AFA3D4B8F723DE82F ! $

Contextual Info: MBRS260T3G, NRVBS260T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

B26G

Abstract: marking B26 diode SCHOTTKY diode mbrs260t3 MBRS260T3 MBRS260T3G DSASW00315214
Contextual Info: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBRS260T3G, NRVBS260T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low