B34 DIODE Search Results

FU-622SLD

Abstract: fu 024 n FU-622 FU622SLD2M3 b34 diode
Contextual Info: • 001fl3üfl b34 ■ MITSUBISHI OPTICALDEVICES FU-622SLD-2M7/2M3/2M6/2M4 1.48 um PUMP LO MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-622SLD series 1480nm laser diode modules are designed as optical pumping sources • Laser Diode specifically optimized fo r pump laser

SW24CXC20C

Contextual Info: lilESTCODE 4bE » SEMICONDUCTORS ih iI M J ITD'J'ISS 0D02b71 b34 « I iIESB DE SEMICONDUCTORS SW xxC/DXC20C - 0 ' 1 - 2 3 Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, Available in industry standard and

DIODE MOTOROLA B34

Abstract: MTD3055EL B34 ZENER DIODE DIODE B34 B34 motorola 369A-10 AN569 MTD3055EL1 Mq-7
Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA h SEMICONDUCTOR TECHNICAL DATA _ Designer's Data Sheet MTD3055EL TM OS IV Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate

DIODE MOTOROLA B34

Abstract: MTD3055EL B34 motorola 369A-10 AN569 MTD3055EL1
Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA m SEMICONDUCTOR _ TECHNICAL DATA MTD3055EL Designer's Data Sheet T M O S IV Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-Mode Silicon Gate

b34 DIODE 412

Abstract: CM400HA-12E diode b34 BP107
Contextual Info: b4E D • 7 2 ^ 4 ^2 1 OODbbTfi b34 * P R X CM400HA-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ .14 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.1 P O W E R E X INC OUTLINE ORAWING

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

DIODE marking 7AA

Contextual Info: m 14055452 DDi5]|ifi b34 International i «r Rectifier HEXFET Power M O S FE T • • • • • IN T E R N A T IO N A L pd-9.833 IRFI624G R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

diode b34

Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Contextual Info: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave

73B34

Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Contextual Info: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode

smd DIODE B34

Abstract: DIODE B34 b34 diode B34 diode smd diode smd b34 smd diode s8 TWG4148AC-128W TWG4148AD-125WS TWG4148CD-126WT TWG4148T-16WS
Contextual Info: SMD Switching Diodes Arrays Multiple Terminals Peak Mark- Reverse ing Voltage Code Part No. Max. Reverse Current @ VR Max. Forward Voltage Drop @ IF SMD Diodes Max. Max. Diode Reverse CapaciPackRecovery tance Pinout age Time @1MHz Diag. 0V CT Trr 7" Reel

711 B34

Abstract: diode schottky B34 DO-214AB b34 MBRS340 b34 surface mount diode b34 G3060
Contextual Info: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

marking B34 diode SCHOTTKY

Abstract: SMAB34 diode schottky B34
Contextual Info: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.

marking B34 diode SCHOTTKY

Abstract: b34 DIODE schottky diode b34 b34 diode diode marking b34 b34 diode NO SMAB34 DIODE ON SEMICONDUCTOR B34 DIODE on B34 diode schottky B34
Contextual Info: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A D Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free E Wheeling, and Polarity Protection Applications.

diode 526 b34

Abstract: diode b34 marking B34 diode SCHOTTKY b34 DIODE schottky diode marking b34 b34 MARKING b34 diode diode schottky B34
Contextual Info: SEMICONDUCTOR SMBB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.

MBRS340

Contextual Info: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

diode 019 b34

Abstract: b34 diode NO b34 DIODE schottky marking B34 diode SCHOTTKY DIODE B34 DIODE ON SEMICONDUCTOR B34 SMAB34 DIODE on B34 diode schottky B34 diode marking b34
Contextual Info: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.

diode 526 b34

Abstract: b34 DIODE schottky
Contextual Info: SEMICONDUCTOR SMBB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.

BB204B

Contextual Info: • bbS3^31 DDSbMDE flbl M A R X N AUER PHILIPS/DISCRETE BB204B BB204G b'lE D SILICON PLANAR VARIABLE CAPACITANCE DOUBLE DIODES The BB204B and BB204G are double diodes with common cathode in a plastic TO-92 variant, primarily intended for electronic tuning in band II f.m. . They are recommended for stages where large signals

marking B34 diode SCHOTTKY

Abstract: DIODE B34 b34 DIODE schottky diode marking b34
Contextual Info: SEMICONDUCTOR SMCB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES ・Low Profile Surface Mount Package. B C ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.

diode b34

Abstract: b34 DIODE schottky marking B34 diode SCHOTTKY SMCB34 b34 diode diode schottky B34 b34 MARKING 711 B34 diode marking b34
Contextual Info: SEMICONDUCTOR SMCB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.

diode schottky B34

Abstract: Mark B34 DO-214AB b34 b34 surface mount mbrs34o
Contextual Info: MBRS340 P A IR G H II-D M ICDNDUCTDR i DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIE! General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

DIODE B36

Abstract: marking B34 diode SCHOTTKY diode marking b34 DIODE MOTOROLA B34 marking b34 b34 DIODE schottky motorola package marking diodes b34 diode schottky B34 DIODE B34 b34 marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS340T3 M BRS360T3 S u rfa c e M ount S c h o ttk y Pow er R ectifier Motorola Preferred Device . . . employing the Schottky Barrier principle in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

FAIRCHILD MBRS340

Abstract: MBRS340 diode b34 Mark B34
Contextual Info: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.