B3B7S54 Search Results

BU206

Abstract: BU205 BU205 equivalent BU204 LC2D
Contextual Info: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R

MJ13335

Abstract: je210 JE-21 MJ13330
Contextual Info: MOTOROLA SC XSTRS/R F l Z E D | b3b7S54 O O Û S I H S t J MOTOROLA MJ13333 M l13335 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 20 A M P E R E SW IT C H M O D E S E R IE S NPN S IL IC O N POWER T R A N S IS T O R S NPN S IL IC O N

BU206

Abstract: BU205
Contextual Info: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON

2N5058

Abstract: 2N5059 2N3724 2N3724 MOTOROLA
Contextual Info: MOTOROLA SC 1EE 0 | b3b7S54 00ab43G 0 | XSTRS/R F 2N5058 2N50S9 M A X IM U M RATINGS Symbol 2N5058 2N5059 Unit VcEO 300 250 Vdc Collector-Base Voltage VCBO 300 250 Vdc Emitter-Base Voltage V ebo 7.0 Rating Collector-Emitter Voltage 6.0 CASE 79-04, STYLE 1

Contextual Info: M O TO R O L A SC X ST R S / R F böE D • b3b7S54 GGTiMS? Tüfi ■ M O T b MAXIMUM RATINGS Rating Sym b o l V alue Unit C o llecto r-Em itter Voltage V cEO -40 Vdc C o llecto r-Base Voltage V CBO -40 Vdc E m itter-Base Voltage Ve b O - 5 .0 Vdc - 1.5

MOTOROLA 1496

Contextual Info: M O T O R O L A SC XSTRS/R F 2bE D • b3b7S54 QmiHTfl 1 Order this data sheet by MG25BZ50/D MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA Isolated G ate Bipolar Pow er T ran sistor M odule Energy M anagem ent Series These IGBT's are designed for industrial service under practical operating environments

MTPSP25

Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,

MTA5N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

MTM12N10

Abstract: 221A-06 25CC MTP12N10E
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device

DIODE 40c 0649

Abstract: MJ100B3D45
Contextual Info: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS

369A-10

Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Contextual Info: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET

2N5943 equivalent

Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low

MTM15N40

Abstract: IRF350 MTM15N40E Motorola Case 1-06
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?aSM 00^32=11 3 I MOT b T - ^ 9 ~ / 3 Order this data sheet by MTM15N40E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T M 15N40 E D esigner's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 15 AMPERES rDS(on) = 0 3 OHMS

MRF586

Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Contextual Info: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

MTM7N50

Abstract: AN569
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • b 3 b 7 2 5 4 DOTflSbB BTS MOTfc. MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET 7 AM PERES RDS(on) = °-8 OHM

Nippon capacitors

Contextual Info: M O T O R O L A SC XSTRS/R F EbE D • b3b?2S4 00^12^0 2 Order this data sheet by MJD243/D MOTOROLA SEMICONDUCTOR ■ H s a n r a n ' T 3 3-0 7 TECHNICAL DATA m " NPN M JD243 PNP M JD253 P lastic Pow er Tran sistor C om plem entary Pair DPAK For S urface M ount and

BC309 equivalent

Abstract: st 393 8-pin T0-226AE
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)

but16

Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS

2N6986

Abstract: G124 C11-C15 C11C15
Contextual Info: MOTOROLA SC CXSTRS/R F bTE T> b3b72S4 D1QG124 35T MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n Push-Pull RF P o w er T ran sisto r . . . designed primarily for wideband large-signal output and driver amplifier stages In the 30 to 500 MHz frequency range.

mq3725

Contextual Info: MOTORCLA SC XSTRS/R F ASE O | t3b75SM QOâtSMS t, | MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage V cEO 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage vebo 6.0 Vdc ic 1.0 Ade Rating Collector Current— Continuous Total Device Dissipation