B37 DIODE Search Results

BB505B

Abstract: BB505G BB505 diode 505 marking code BB Diode BB diode 50-5G Q62702-B37 KJ01 F A 505
Contextual Info: SIEMENS Silicon Variable Capacitance Diodes BB 505 B BB 505 G • For UHF and VHF tuners • Not for new design Type BB 505 B Marking Ordering Code Pin Configuration Package1 orange Q62702-B37 DO-35 DHD Q62702-B270 BB 505 G °o - - Kk lr EHA07-d£o Maximum Ratings

B37 zener diode

Abstract: SOD-18 BZX70 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18
Contextual Info: BZX70 SERIES M A IN TEN A N C E TYPE JiJaE_] PH IL IP S INTERNATIONAL • 711D6Sb QG41b7b b37 M P H I N REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended fo r use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.

Contextual Info: urm LINEAR TECHNOLOGY CORP 53E D • 5Sia4bfl 000b3G3 b37 « L T C 7 - 7 9 - c 7-«2o LT1126/LT1127 TECHNOLOGY D ual/Q uad D ecom pensated Low Noise, High Speed Precision O p Amps D€SCMPTIOn F€ATUR€S ■ 100% Tested Low Voltage Noise ■ Slew Rate ■ Galn-Bandwidth Product

Contextual Info: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol

TGA8061SPCA

Abstract: TGA8061
Contextual Info: TEXAS INSTR L I N / I N T F C SOE D • Ô T b l T E H G D Ô Ô 3 7 8 b37 « T i m TGA8061-SPC-A PACKAGED MONOLITHIC 100-MHz TO 3.5-GHz 13 0 \ LOW-NOISE AMPLIFIER D3945, OCTOBER 1991 17-dB Gain With 3-dB Noise Figure 2:1 Input/Output SWR Unconditionally Stable

Contextual Info: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings

b3708

Abstract: fast recovery diode 1000v 10A b37 diode DIODE 1.0A 1000V diode 1000V 10a
Contextual Info: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Cathode mark 02 Lot No.

Contextual Info: FAST RECOVERY DIODE 30MF30 30MF40 30MF30R 30MF40R 3 3 A /3 0 0 ~ 4 0 0 V /trr : 60nsec FEATURES ° Hermetically Sealed Case ° High Reliability Device Ultra - Fast Recovery ° Low Forward Voltage Drop 8 Low Power Loss, High Efficiency ° High Surge Capability

b37 diode

Abstract: fast recovery diode 1000v 10A ERB37 B3708
Contextual Info: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Cathode mark 02 Lot No.

B3708

Abstract: fast recovery diode 1000v 10A b37 diode diode marking b37 ERB37 10A800 marking b37
Contextual Info: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications High speed switching

b37 diode

Abstract: DIODE 1.0A 1000V
Contextual Info: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics

Contextual Info: DAN209S DAP209S DAN215 DAP215 Diode, array, high-speed switching, leaded In these single packages, there are two diodes as shown in the circuit diagrams. They are available in different small envelopes. Dimensions Units : mm DAN209S, DAP209S (SPT) 4±0 2

C37 diode

Abstract: C37-10 diode diode 10kv 5KV DIODE ESJC37-10 transistor c37 ESJC37 ESJC37-05 ESJC37-08 high voltage diode 100 kv
Contextual Info: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark

C37 diode

Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
Contextual Info: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark

4B31

Abstract: ESJA82-14A 0MO2
Contextual Info: -L 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: T R A N S IS T O R M O D U LE QCA150AA100 UL;E76102 M Q C A 1 5 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Th e mounting base o f the module is electrically isolated

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.

Contextual Info: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Relief Valve Hydraulics

Abstract: MQG4 6200-N8 CORT MR513 wtek MCC37 09N40 remote rack plc5 communicate PanelView Plus with plc 5
Contextual Info: R a tN -B R R D ^ Force Control Module C at. N o . 1 T U - Q H User M anual I ^ M M É iiÉ Ë É É iiM É ! HHI V • Hh hH H H Blilfilt m W ÈÊtSÈ wÊËËK lÉ »» W *i«r ît^æ .„w *fes* s « » « ii:^ ^ » îr & ï^ . Important User Information

ESJA23-04

Abstract: diode A23
Contextual Info: ESJA23-04 3 . 6 k V *± /j'« a * * * - k : Outline Drawings HIGH VO LTAGE SILICO N DIODE ESJA23& , r i W ' d z L - ? • ESJA23 is high reliability resin molded type high voltage silicon diode for distributor-less automobile ignition system which is sealed a multilayed mesa type silicon chip by epoxy

Contextual Info: HIGH-CUBRENT HALF-BRIDGE MOTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating

ERR81-004

Contextual Info: ERR 81 3000A ^ a ,y h + —^ ' * l) 7 y 3j-—K : Outline Drawings Units mm SCHOTTKY BARRIER DIODE Features • High current • V S it flia Flat package : Applications • * * V K » « * d l* S 3 fc • Spot w elders 72±2 Plating use power supplies 5MAX.

Contextual Info: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR