TRANSISTOR WM 9
Abstract: BF749 UHF transistor GHz transistor wm
Contextual Info: Philjps_Semicondtgtore B l 711065b QObflbSfl 55^ HIN ^^Produc^pecification NPN 5 GHz wideband transistor FEA TU R ES BF749 e P IN N IN G PIN • High power gain • Low noise figure • Gold m etallization ensures excellent reliability. D E S C R IP T IO N
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BF749
BF749
OT143
MSB035
OT143R.
TRANSISTOR WM 9
UHF transistor GHz
transistor wm
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2n4391
Abstract: 2N4393 2N4392 17Z6 IEC 439-3
Contextual Info: 711065b 00bô07M 5 0b • P H I N 2N4391 to 4393 N-CHANNEL FETS S ilico n sym m etrical n-channel d e p le tion typ e ju n c tio n fie ld -e ffe c t transistors in TO -18 m etal envelopes w ith th e gate connected to th e case. T he transistors are intended fo r lo w pow er, ch o p pe r o r sw itching,
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711005b
2N4391
711002b
2N4392
2N4393
2N4393
17Z6
IEC 439-3
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BFR84
Abstract: bfr84 is bfr84 as mosfet depletion transistor bfr84
Contextual Info: 711065b DDb7b37 137 IPHIN BFR84 SILICON N-CHANNEL DUAL GATE MOS-FET D e p le tio n ty p e fie ld -e ffe ct tra n sisto r in a m etal T O -7 2 envelope w ith source and substrate connected to th e case, intended fo r a w id e range o f v.h.f. ap plications, such as v.h.f. te levisio n tuners, f.m . tuners,
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711065b
DDb7b37
BFR84
711002b
V62-s
BFR84
bfr84 is
bfr84 as
mosfet depletion
transistor bfr84
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MPS3704
Abstract: MPS3706 MPS3705
Contextual Info: MPS3704 MPS3705 MPS3706 philips international 5bE D 711065b 0042406 4Ô4 • SILICON PLANAR EPITAXIAL TRANSISTORS PHIN T -Z 7 -Z / NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.
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MPS3704
MPS3705
MPS3706
711065b
MPS3704
100mA
MPS3706
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BUK445-600B
Abstract: 100-P
Contextual Info: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in
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BUK445-600B
-SOT186
BUK445-600B
100-P
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34D SERIES CAPACITOR
Abstract: BLY92 BLY92C Philips MBB .J275
Contextual Info: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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D0b3b37
BLY92C/01
OT122F1A
OT122F
M34326
11J1U
34D SERIES CAPACITOR
BLY92
BLY92C
Philips MBB
.J275
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IN916
Abstract: TDA8702 TDA8708A TDA8709A TDA8709AT
Contextual Info: IN TE G R A TE D C IR C U ITS h SlnllET TDA8709A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS 711065b 0073fe3fl 302 This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r
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TDA8709A
711065b
0073fe3fl
TDA8709A
7110fl2b
D073bbl
IN916
TDA8702
TDA8708A
TDA8709AT
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BUK543
Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor
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711065b
BUK543-100A/B
-SOT186
BUK543
BUK543-100A
BUK543-100B
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BUK453-60A
Abstract: BUK453-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711065b
BUK453-60A/B
T0220AB
BUK453-60A
BUK453-60B
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sot172
Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures
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BLV99/SL
OT172
-SOT172D
MDB012
7Z94685
sot172
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SMD IC 2025
Abstract: Y 09 PZTA92 PZTA93 bs7 smd
Contextual Info: 711065b ODbl'm 71D IPHIN P Z T A 92 PZTA 93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icro m in ia tu re S M D envelope S O T -2 2 3 . T h e y are p rim a rily intended fo r use in te lep h o n y and professional co m m un ication eq uip m ent.
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711065b
PZTA92
PZTA93
OT-223)
PZTA92
MECHANICAL00mA;
SMD IC 2025
Y 09
PZTA93
bs7 smd
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silicon planar epitaxial transistors
Contextual Info: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA
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BCY70
BCY71
T-27-09
711002b
silicon planar epitaxial transistors
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BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2b
BUK106-50L7S
BUK106-50LP/SP
BUK106-50L/S
BUK106-50I7S
BUK10B-50US
philips ldh
d6506
BUK106-50L
BUK106-50S
buk106
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TDA1534
Abstract: SAMPLE HOLD AMPLIFIER single supply TDA1535 sample and hold TDA1535B
Contextual Info: Philips Semiconductors Integrated Circuits Preliminary specification _ TDA1535B High-speed single sampie-and-hold amplifier QUICK REFERENCE DATA GENERAL DESCRIPTION The TDA1535B is a high-speed sampte-and-hold amplifier with a total harmonic distortion of 0.001%,
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TDA1535B
TDA1535B
-17V-100
TDA1534
TDA1534.
711002b
c12Ea
TDA1534
SAMPLE HOLD AMPLIFIER single supply
TDA1535
sample and hold
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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711002b
G0114SS
PCF84C121
PCF84C121.
PCF84C121
PCF84C12.
7110fl2b
MCL T1-1
MAB8048
PCF84C12
PCF84C121P
PCF84C121T
S020
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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SAB 8048 P 220 SM 590
Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Contextual Info: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for
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PCF84C633A
PCF84C633A
PCF84CXX
16-bit
7Z24606
711002b
007412b
SAB 8048 P 220 SM 590
MAA 723
MADE S18B
micro controller based cfl Inverter
soc 512a
d74c
4X16 lcd
1514c
8 lcd digit counter
s1bc
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BD235 PHILIPS
Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its
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BD233
BD235
BD237
711002b
aSOT-32
BD234,
BD236
BD238.
BD233
BD235
BD235 PHILIPS
bd233 T
bd237 philips
BD234
BD237-10
BD237
BD238
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3843 application note
Abstract: HP2 800 243 PCF84C85P MAB8400 3M 4611 dpi 510 MAB8048 PCF84C85 PCF84C85T 8c032
Contextual Info: DEVELOPMENT DATA PCF84C85 This data sheet contains advance information and specifications are subject to change without notice. PHILIPS INTERNATIONAL - 34E D H 7110aab 0011415 4 B “T ^ - W - O S SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 32 I/O LINES D ESCRIPTIO N
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7110aab
001141S
PCF84C85
MAB8048
84CXXX
PCF84C85
12tXTAL
3843 application note
HP2 800 243
PCF84C85P
MAB8400
3M 4611
dpi 510
PCF84C85T
8c032
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BLY91
Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _
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711062b
00b3bn
BLY91C/01
lthasaSOT122F
-SOT122F
MB8012
BLY91
BH 1117 F
Silicon Epitaxial Planar Transistor philips
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circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS
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SC68C562
SC68C562
circuit diagram of rc transmitter and receiver
philips e3
Philips KS capacitors
SC68C562C1N
SCN68562
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3WD3
Abstract: 16KX8 16kx8 static ram ttl 80C51 80C52 87C524 P80C528FBP P83C524EBP
Contextual Info: SbE D PHILIPS IN TERNATIONAL • 711GfiEb CmafiflTS TTS H P H I N Product specification Philips Semiconductors Microcontroller Products 83C524/87C524 CMOS single-chip 8-bit microcontroller PIN CONFIGURATIONS DESCRIPTION The 8XC524 single-chip 8-bit microcontroller
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83C524/87C524
8XC524
80C51
80C51.
83C524
87C524)
16-bit
48tcLCL
3WD3
16KX8
16kx8 static ram ttl
80C52
87C524
P80C528FBP
P83C524EBP
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RZ3135B50W
Contextual Info: - 3 3 ^ 3 RZ3135B50W PHILIPS INTERN A T I O N A L SbE D • 711DaEt. OOHbLOS 124 * P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar e p ita xia l m icrow ave p o w e r tran sisto r, intended fo r use in a common-base class-C broadband pulse p ow er a m p lifie r w ith a freq u e n cy range o f 3.1 to 3.5 GHz.
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RZ3135B50W
711Dflat
T-33-13
711002b
004bb0b
RZ3135B50W
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transistor D042
Abstract: b0338 b0332 transistor 338 D0420 b0334 bd33 transistor c 3331 BD333 BD335
Contextual Info: BD332; 334 BD336; 338 PHILIPS INTERNA TIO NA L SbE ]> 7110 02b 00W2a= t, l f l 4 * P H I N SILICON DARLINGTON POWER TRANSISTORS T -tt-S Î P-N-P e p itax ial base transistors in m o n o lith ic D arlin gton c irc u it fo r a u d io o u tp u t stages and general
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BD332;
BD336;
711002b
0042a=
OT-82
BD331,
BD333,
BD335
BD337.
BD332
transistor D042
b0338
b0332
transistor 338
D0420
b0334
bd33
transistor c 3331
BD333
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