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    02n60

    Abstract: JD127
    Contextual Info: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.


    OCR Scan     		b3b7E54 120-TIP TIP125-T1P127 b3b72S4 MJD122 MJD127 02n60 JD127 PDF

    5105 GE

    Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
    Contextual Info: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS


    OCR Scan     		b3b7E54 BD505. BD507, BD509 BD506 BD508 BD510 BDS06. BD506-1, 5105 GE Motorola 506 uniwatt BD507 BD505 transistor f 506 transistor BD 135 BD506-5 PDF

    B0508

    Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
    Contextual Info: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS


    OCR Scan     		b3b7E54 BD505. BD507, BD509 BD506. BD506 506-BD B0508 transistor f 506 506bd BD507 uniwatt BD510 80509 BD505 PDF

    MMBT404A

    Contextual Info: ]>F|b3b7E54 MO TO RO LA SC ÍXSTRS/R F> 6367254 M OT O RO L A SC XSTRS/R □ D flEO E? fi 96D 8 2 0 2 7 . F D t M A XIM U M RATINGS *- 37~ 2 3 Value Sym bol 404 404A Unit Collector-Emitter Voltage VCEO 24 35 Vdc Collector-Base Voltage v CBO 25 40 Vdc Emitter-Base Voltage


    OCR Scan     		b3b7E54 MMBT404 MMBT404A OT-23 O-236AA/AB) MMBT404A PDF

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


    OCR Scan     		b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331 PDF

    2N3792 MOTOROLA

    Abstract: 2N3789 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA
    Contextual Info: MOTOROLA SC XSTRS/R F 12E D | tj3fe.7aSM GGÖMSG1 T | "7 ^ 3 3 -2 3 2N3789. MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N3792 S IL IC O N PNP POW ER T R A N S IS T O R S 10 A M P E R E . . designed for medium-speed switching and amplifier applications. These devices feature:


    OCR Scan     		2N3789. 2N3792 2N3789 2N3790) 2N3791, 2N3792) 2N3713 2N3716 2N3701 2N3792 MOTOROLA 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA PDF

    MJ16016

    Abstract: J160 MJ16014 npn 3778
    Contextual Info: I : MOTOROLA SC XSTRS/R F 12E 0 | OGaSEM MOTOROLA T | MJ16014 MJ16016 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 20 A M P E R E NPN SILICON POWER T R A N SISTO R S SW ITCHM ODE III SERIES NPN SILICON POWER TRANSISTORS 4 5 0 V O LT S


    OCR Scan     		MJ16014 MJ16016 MJ16016 MJ16014for P-6042 J160 npn 3778 PDF

    MRF544

    Contextual Info: M OT OR OL A SC XSTRS/R F 4bE D b3h7ES4 GQTMTMM fl « f l O T b MOTOROLA • I SEMICONDUCTOR I TECHNICAL DATA M R F544 M RFC 544 The RF Line NPN Silicon H ig h Frequency T ra n sisto rs |q = 4 0 0 m A . . . d e s ig n e d f o r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h r e s o lu tio n c o lo r v id e o


    OCR Scan     		PDF

    mtp2p45

    Abstract: TP2P45 45MTP 314B03 HF 1932
    Contextual Info: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,


    OCR Scan     		b3b7254 MTP2P50 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02 314B03 mtp2p45 TP2P45 45MTP HF 1932 PDF

    2N4014

    Contextual Info: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C


    OCR Scan     		2N4014 2N4014 O-206AA) b3b7E54 PDF

    MJ13080

    Abstract: MJ13081 AN-222 DOA107A
    Contextual Info: Tb MOTOROLA SC -CXSTRS/R F> f 6 3 8 7 2 5 4 M O J O R O L A SÇ DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 X S T R S / R F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEM ICONDUCTOR TECHNICAL DATA ' " ^ É S D e s i g n e r ’ s 'O ì a t a ^ S h e e t á g f c s s * '-


    OCR Scan     		p6367254 000107b -T-33-/3 j13080 mj13081 MJ13080 MJ1308T MJ13081 AN-222 DOA107A PDF

    MTP8N20

    Abstract: MTM8N20 221A-06 25CC
    Contextual Info: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,


    OCR Scan     		bBb72S4 MTM8N20 MTP8N20 b3b7B54 MTP8N20 221A-06 25CC PDF

    TP8N20

    Abstract: 8n20 314B03 MTP8N20
    Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA bflE D • b B b V E S 1! GDTflSbfi ÔÔ7 ■ M O T b ■ SEM ICO NDUCTOR TECHNICAL DATA _ M TM 8N20 M T P 8N 2 0 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02 314B03 O-220) TP8N20 8n20 MTP8N20 PDF

    s2525

    Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit Vdc Collector-Emitter Voltage VCEO 25 Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage v EBO 5.0 Vdc Collector Current — Continuous !C 500 mAdc Total Device Dissipation @ T ^ = 25°C Derate above 2 5 T Pd 625


    OCR Scan     		MPS6560 MPS6562 O-226AA) b3b7E54 01G3bSQ s2525 PDF

    motorola 6820

    Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
    Contextual Info: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S


    OCR Scan     		TW-200 TRW53001 TRW53001 JUNCT10N motorola 6820 motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279 PDF

    8D438

    Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
    Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary


    OCR Scan     		b3b7E54 BD434, BD436 BD438, BD440 BD442 BD433/435/437/439/441. 8D438 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA PDF

    motorola 2N2270

    Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
    Contextual Info: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.


    OCR Scan     		h3b7E54 007b70E 2N2896 2N3700# 2N2895 2N956 2N2897 2N718 2N2221A# 2N2222AI motorola 2N2270 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427 PDF

    MTP10N15

    Abstract: 221A-06 25CC AN569
    Contextual Info: MO T O R O L A SC XSTRS/R F bôE D fe3b7254 GG'ifl72ti IT T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r IU-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed fo r medium voltage, high


    OCR Scan     		fe3b7254 MTP10N15 C085-Crss MTP10N15 221A-06 25CC AN569 PDF

    NS 8002 1151

    Abstract: MQ3251A
    Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)


    OCR Scan     		3b7254 MIL-S-19500/323 O-116) NS 8002 1151 MQ3251A PDF

    marking H3t sot23

    Abstract: sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23
    Contextual Info: r DE | t , 3 t , 7 S S 4 sc -c x s t r s / r F} 6367254 MOTOROLA SCCXSTRS/R motorola F 96D 8 2 0 1 2 . i D GflED ia D T ^ ï- â 5 M A X IM U M RA TIN G S Symbol Value Unit Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S 25 Vdc >G 10 mAdc Rating


    OCR Scan     		0flE03D MMBT918 T-31-15 marking H3t sot23 sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23 PDF

    B755

    Abstract: MPS911
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO's. Available in a surface-mountable plastic package, as well as the popular TO-226AA TO-92 package. This Motorola series of small-signal


    OCR Scan     		O-226AA A/500 MMBR911LT1 MPS911 b3b7E54 B755 PDF

    d5383

    Contextual Info: - 6 3 6 7 2 5 4 MOTOROLA S C X S T R S / R F MOTOROLA D T-33-35 69D 79944 Order this data sheet by MJ50BX120/D t3t7asl< °D7',‘1l" ) 7 T SEMICONDUCTOR TECHNICAL DATA C MJ50BX120 N P N Silico n Pow er Transistor M odule Energy M anagem ent Series DUAL


    OCR Scan     		T-33-35 MJ50BX120/D MJ50BX120 MK145BP, D5-3833 d5383 PDF

    Transistor D 799

    Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
    Contextual Info: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan     		BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR PDF

    motorola rf device

    Abstract: motorola rf Power Transistor vk200-20 MRF224 vk200 VK200 rfc RF POWER TRANSISTOR NPN npn transistor 70 volt RF POWER TRANSISTOR NPN vhf RF POWER TRANSISTOR NPN, motorola
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • Specified 12.5 Volt, 175 MHz Characteristics —


    OCR Scan     		VK200-20/4B, 3b7554 MRF224 b3b7E54 motorola rf device motorola rf Power Transistor vk200-20 vk200 VK200 rfc RF POWER TRANSISTOR NPN npn transistor 70 volt RF POWER TRANSISTOR NPN vhf RF POWER TRANSISTOR NPN, motorola PDF