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    2N2896 Price and Stock

    Microchip Technology Inc 2N2896

    TRANS NPN 90V 1A TO18
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    Central Semiconductor Corp 2N2896

    Bipolar Transistor NPN High Current 140V 1A 3-Pin TO-18 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N2896)
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    Central Semiconductor Corp 2N2896 PBFREE

    Transistor GP BJT NPN 90V 1A 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N2896 PBFREE)
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    Central Semiconductor Corp 2N2896 TIN/LEAD

    Transistor GP BJT NPN 90V 1A 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N2896 TIN/LEAD)
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    Solid State Devices Inc (SSDI) 2N2896

    To 18 Npn Silicon Transistor Rohs Compliant: Yes |Solid State 2N2896
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    2N2896 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2896 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=90 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Original PDF
    2N2896 Continental Device India NPN SILICON PLANAR EPITAXIAL TRANSISTORS, General purpose amplifier, TO-18 Original PDF
    2N2896 Motorola Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO18 / Vceo=90 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Original PDF
    2N2896 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=90 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Original PDF
    2N2896 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2896 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2896 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2896 Motorola European Master Selection Guide 1986 Scan PDF
    2N2896 Motorola Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) - Pol=NPN / Pkg=TO18 / Vceo=90 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Scan PDF
    2N2896 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2896 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2896 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N2896 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2896 Unknown Vintage Transistor Datasheets Scan PDF
    2N2896 Unknown Vintage Transistor Datasheets Scan PDF
    2N2896 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2896 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2896 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2896 Unknown GE Transistor Specifications Scan PDF
    2N2896 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2N2896 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text:       The 2N2896 is Designed for General Purpose Amplifier and Switching Applications.   MAXIMUM RATINGS                       


    Original     		PDF 2N2896

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N2896X 500mW O-206AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2896 O206AA) 19-Jun-02

    2N2896

    Abstract: 2N2895 motorola TO-18 dimensions
    Text: MOTOROLA Order this document by 2N2896/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor 2N2896 COLLECTOR 3 LAST SHIP 21/03/00 NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS 3 LIFETIME BUY Rating Symbol Value Unit Collector – Emitter Voltage VCEO 90


    Original     		PDF 2N2896/D 2N2896 2N2896/D* 2N2896 2N2895 motorola TO-18 dimensions

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N2896X 500mW 86mW/Â O-206AA)

    JAN 2N2896

    Abstract: 2N2896 2N2896 data sheet 120M
    Text: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2896 O206AA) 2-Aug-02 JAN 2N2896 2N2896 2N2896 data sheet 120M

    Untitled

    Abstract: No abstract text available
    Text: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)


    Original     		PDF 2N2896

    Untitled

    Abstract: No abstract text available
    Text: ^eml-donduckoi iPioaucti, Dna. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm (inches) 2N2896 (0.230), T51 (0.209)' NPN SILICON TRANSISTOR 4.95 (0.195) 4.52(0.178)


    Original     		PDF 2N2896 10vlTA 150mA,

    transistor 559

    Abstract: No abstract text available
    Text: 2N2896CSM4 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)


    Original     		PDF 2N2896CSM4 transistor 559

    2n2896

    Abstract: No abstract text available
    Text: 2N2896 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra. Page 1 of 2 Enter Your Part # Home Online Store Special Offers: 2N2896 Availability FREE UPS Ground Shipping on Orders above $150.00 Buy 2N2896 at our online store!


    Original     		PDF 2N2896 377on 2N2896 12-Apr-2011 STV3208 LM3909N

    Untitled

    Abstract: No abstract text available
    Text: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)


    Original     		PDF 2N2896

    Untitled

    Abstract: No abstract text available
    Text: 2N2896 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 90V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2896 O206AA) 16-Jul-02

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2n3547

    Abstract: 2N3549
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton


    OCR Scan     		PDF 2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549

    2N2896

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Rating C o lle c to r -E m itte r V o lta g e Symbol 2N2895 2N2896 Unit VC E O 65 90 Vdc C o lle c to r -E m itte r V o lta g e VCER 80 140 Vdc C o lle c to r-B a s e V o lta g e v CBO 120 140 Vdc E m itte r-B a s e V o lta g e V e BO


    OCR Scan     		PDF 2N2895 2N2896 2N2895, 2N2896

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


    OCR Scan     		PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302


    OCR Scan     		PDF T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369

    uc 2895

    Abstract: 2n2895 2n2896 sn289
    Text: MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 C o lle cto r-E m itte r Voltage VCEO 65 90 Vdc C o lle cto r-E m itte r Voltage VCER 80 140 Vdc C ollector-Base Voltage VCBO 120 Em itter-Base Voltage Vebo 7.0 Vdc C o lle cto r C u rrent — C o ntinuous ie 1.0


    OCR Scan     		PDF 2N2895 2N2896 2N2895, O-206AA) 2N2895 2N2896 SN2895 3b7554 uc 2895 sn289

    2N2897

    Abstract: 2N2895 2N2896
    Text: MOTOROLA SC XSTRS/R 12E F D I b3fc>7BS4 Q QÖt . 27 3 T | 2N2895'r’ 27''3 thru 2N2897 MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 2N2897 U nit VCEO 65 90 45 Vdc Coltector-Emitter Voltage Collector-Emitter Voltage VCER 80 140 60 Vdc Collector-Base Voltage


    OCR Scan     		PDF 2N2895 2N2896 2N2897 2N2897 2N2896, 2N2895,

    2N2896

    Abstract: No abstract text available
    Text: m 2N2896 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2896 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 90 V P d is s 0.5 W @ TA = 25 °C P d is s 1.8 W @ Tc = 25 °C V j -65 °C to +200 °C stg


    OCR Scan     		PDF 2N2896 2N2896

    2N3546

    Abstract: 2N3135 2N3241 2N3242 2N3550 2N3545
    Text: Small Signal Transistors TO-18 Case Continued T Y P E N O. 2N2896 2N2897 2 N 2906A 2N 2907A 2N2952 D ESC R IPTIO N NPN AM PL/SWITCH NPN AMPUSWITCH hi =E BVC BO BVCEO BVEBO C BO VCBO (V ) (V ) (V ) (m A ) MIN MIN MIN MAX 'IC E S “ IC E V 140 90 7.0 .


    OCR Scan     		PDF 2n2896 2n2897 2n2906a 2n2907a 2n2952 2n3009 20MPUSWITCH 2n3545 2n3546 2n3547 2N3135 2N3241 2N3242 2N3550

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311

    BC109 MOTOROLA

    Abstract: N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola BC107 2N1711 MOTOROLA
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.


    OCR Scan     		PDF N2896 2N3700# 2N2484# 2N930 BCY59 BC107 2N2222A# 2N1711 2N3019# BSX46 BC109 MOTOROLA N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola 2N1711 MOTOROLA

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211