KM68512 Search Results

8512A

Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible

km68512lg

Abstract: km68512l 68512 KM68512LT
Contextual Info: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • P ro ces s T e c h n o lo g y : 0 .6 um C M O S T h e K M 6 8 5 1 2 A fa m ily is fa b ric a te d by S A M S U N G 'S • O rg a n iz a tio n : 6 4 K x 8

SRAM 64Kx8

Abstract: 64Kx8 CMOS RAM KM68512AL
Contextual Info: KM68512AL / AL-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|iW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply

al1419

Contextual Info: CM OS SRAM KM68512AL/AL-L 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70ns Max. • Low Power Dissipation Standby (CMOS) : 10«W(Typ.) L-Version 5/<W(Typ.) LL-Version Operating : 35mW(Typ.) • Single 5 ± 1 0 % V power supply

Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.

Contextual Info: CMOS SRAM KM68512AL/AL-L 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im e : 55, 70ns Max. • Low Power Dissipation Standby (CMOS) : 10,« W(Typ.) L-Version 5,uW(Typ.) LL-Version Operating : 35mW(Typ.) • Single 5 ± 1 0 % V power supply

64Kx8 CMOS RAM

Abstract: KM68512BLT-5L KM68512B KM68512BLI-L KM68512BL-L KM68512BLT-7L KM68512BLTI-7L
Contextual Info: Advance CMOS SRAM KM68512B Family Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

KM68512ALG-7

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6nm CMOS • Organization: 64Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage : 2V Min • Three state output and T T t Compatfole

ti913

Abstract: 01-V08
Contextual Info: Advance KM68512B Family CMOS SRAM 64Kx# bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • The KM68S12B family is fabricated by SAMSUNG'S advanced CMOS process technology. The fam ily support various operat­ ing temperature ranges and small package type for user flexi­

Contextual Info: CMOS SRAM KM68512AL / AL-L 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|xW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply

Contextual Info: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply

Contextual Info: KM68512A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft Novem er 28th 1993 Design target 0.1 Revision May 13th 1994 Preliminary 1.0 Finalize December 1st 1994 Final

Contextual Info: KM68512B Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAM SUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10/iW (typ.) L-Version 5fiW (typ.) LL-Version Operating : 55mW/1MHz (Max.)

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512LG

Abstract: KM-66 KM68512
Contextual Info: KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10/iW (typ.) L-Verslon 5/iW (typ.) LL-Version Operating : 3EmW (typ.)

KM6651

Abstract: cs250 KM68512ALI SRAM 64KX8 5V
Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.

km68512lg

Abstract: ob2535 cs250 KM68512LT 10MW KM6651
Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion

KM68512LG

Abstract: KM68512 KM68512LT
Contextual Info: CMOS SRAM KM68512UL-L 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 55mW/1MHz (Max.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: KM68512AL/AL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70ns Max. • Low Power Dissipation Standby (CMOS) : 10«W(Typ.) L-Version 5/iWfTyp.) LL-Version Operating : 35mW(Typ.) • Single 5 + 10%V power supply