B4275 Search Results

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

2SK786

Abstract: fsjc EER 35 kd
Contextual Info: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss

Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.

UPD41258G10

Abstract: UPD41254 upd41256l
Contextual Info: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com­ ponents in suface mount packages. Four factors

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

4070N

Contextual Info: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between

PS2501-3

Abstract: PS2505-3
Contextual Info: N E C ELECTRONICS INC 3QE » • b427525 0025271 0 ■ SE OPTOELECTRONIC DEVICES T -*H - * 3 O ptoisolators Can Type Absolute Maximum Ratings (Ta = 25°C Part Number PS1001 Features 5 pin, Hermetic CAN BV(Vr.m.s .) If (mA) lC (mA) 1 k (DC) 60 50 Electrical Characteristics (Ta = 25-C)

Contextual Info: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*

Contextual Info: N E C ELECTRONICS INC NEC NEC Electronics Inc. 3GE D • b427525 005S3Tt T ■ //PD75328/P328 4-Bit, Single-Chip Microcomputers with LCD Controller/Driver and A / D Converter M Description T h e ^ P D 7 5 3 2 8 and//PD75P328 are high-perform ance, sin g le -ch ip C M O S m icrocom puters that contain a

PS2506-2

Contextual Info: E C EL EC TRO NICS INC 30E D • b427525 OGETtilQ 7 ■ ^ - T-41-83 PHOTO COUPLERS PS2506-lPS2506-2,PS2506-3lPS2506-4 M U LTI PHOTO CO UPLER HIGH ISOLATION VOLTAGE AC INPUT,DARLINGTON TRANSISTO R TYPE

FIP11B13

Abstract: FIP6A13 FIP11B b427525 FIP13Y8 FIP8B11
Contextual Info: b427525 DDHflin 73b « N E C E Table 4 For ECR and Others Type No No. of Digits S!MMI^SSiiâB8àiSâSs!Siiâ$jiii»fi6ieÄMliSSi' Digits x lines S*. !»•».» „ *“ Fig. No. C.H c .w (mm) (mm) P.H (mm) P.L (mm) P.T (mm) L.P (mm) L.L (mm) I FIP6A13C

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

TO18 package LED 1300 nm

Contextual Info: N E C b5E D ELECTRONICS INC • b427525 G03Ö150 777 » N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5302L1 ELECTRON DEVICE 1 300 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi­

Contextual Info: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.

JY diode

Abstract: NDL5009
Contextual Info: 3GE D • b427525 ‘0051240 1 ■ N E C ELECTRONICS INC T~ - ^ - 0 7 LASER DIODE J NDL5009 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E S C R IP T IO N ND L.5009 is a long wavelength laser diode especially designed fo r longdistance high capacity transmission systems. The

SE304

Contextual Info: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S

PC1212C

Abstract: UPC1212C NEC 212C C1212C RF360 CFZ-455C 2SA119 212C HPC1212C 1S2207
Contextual Info: N E C 6 4 275 25 N E C ELECTRONICS INC □SE D I b427555 □□E2b?fl 4 E L EC TR ON ICS INC 05E 22678 D BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 1 2 1 2 C T - 7 V - 0 5 -0 1 AUDIO POWER AMPLIFIER DESCRIPTION The ¿iPC1212C is a silicon m onolithic integrated circuit designed fo r an audio power am plifier used in a portable radio receiver

PS5003LC

Abstract: photo interrupter module Photo diode circuit diagram
Contextual Info: N E C ELECTRONICS INC 3GE D • b427555 ODETÔlb 3 ■ -f-4-1-"73 PHOTO JN TER R U PTER _ P S 5003L C PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5003LC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit

A-2203

Abstract: A2203 JHPB100474A JJPB100474A PPB100474A
Contextual Info: N E C blE J> • ELECTRONICS INC b42755S DD3S371 5^1 « N E C E l^ T M i Y ' r iM Z i W NEC Electronics Inc. PPB100474A 1,024 X 4-Bit 100K ECL RAM - 3 Description Pin Configurations The ¿tPB100474A is a very high-speed 100K interface ECL RAM organized as 1,024 words by 4 bits and

ltls e3

Abstract: uPD42601 WD33C93 NEC disk controller ltls PD42601
Contextual Info: N E C ELECTRONICS SEC INC 3ÛE » b427525 In the field of computer-aided design and manufactur­ ing CAD/CAM , running software with many utility programs results in time-consuming disk accesses. W orkstations operating in a local area network (LAN) also are performance-limited by the heavy burden on

2SK787

Abstract: ld4a0 TI42
Contextual Info: 6427525 N E C De | E L E C T R O N IC S 98D IN C 18938 b427555 0010^35 b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIELD EFFECT POWER ELECTRON DEVICE N-CHANNEL TRANSISTOR 2SK787 FAST SWITCHING S I L I C O N POWER MOS FET FEATURES «Suitable fo r switching power supplies,

nec A2C

Abstract: A50A CERAMIC FLATPACK 20pin
Contextual Info: N E C ELECTRONICS I NC L.1E D • b42752S G03S3E4 77S B N E C E P P B 10480 L U IjV * NEC Electronics Inc. 16,384 X 1-Bit 10K ECL RAM T - Description Pin Configurations The ¿/PB10480 is a very high-speed 10K interface ECL RAM organized as 16,384 words by 1 bit and designed

FIP40X2CD

Abstract: FIP40X2BC FIP40X1HC FIP20X FIP20X4AB FIP-7 20x4 40x2
Contextual Info: • b427525 0 0 4 8 ^ 3 21Ô * N E C E s t i t ie 8s i i 11 is i m i s FIP20XM2AB 20x2 FIP20XM2GA 20x2 i ì à i i t à i i t s i . àtà à t à ij FIP20XM2FA 20x2 FIP20X4AB 20x4 FIP20X4CB 20x4 FIP26XM1DA 26x1 FIP40X1HC 40x1 FIP40X2BC 40x2 FIP40X2CD 40x2

simm 72pin

Abstract: D0343
Contextual Info: NEC N E C ELECTRONICS INC hlE D • NEC Electronics Inc. b427525 DD34347 3fl5 « N E C E MC-422000AA40 2,097,152 X 40-Bit Dynamic CMOS RAM Module T -Y 4 Description Pin Configuration The M C-422000AA40 is a fa s t-p a g e dynamic RAM mod­ ule organized as 2,097,152 words by 40 bits an d de­