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    B53 TRANSISTOR Search Results

    B53 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B53 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPB029N06N3G

    Abstract: No abstract text available
    Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 IPB029N06N3G

    d5cd

    Abstract: IPI024N06N3 G
    Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J *& Y" )*( 6


    Original     		PDF IPB021N06N3 IPI024N06N3 IPP024N06N3 d5cd IPI024N06N3 G

    DIODE marking S6 89

    Abstract: diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R
    Text: IPB023N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *&+ Y" I9 ,( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB023N06N3 DIODE marking S6 89 diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R

    4b 5c marking

    Abstract: PG-TO-263-7
    Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB030N08N3 4b 5c marking PG-TO-263-7

    marking 9D

    Abstract: G973 marking eb5 EB5 MARKING
    Text: IPB260N06N3 G IPP260N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *. Y" I9 */ 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB260N06N3 IPP260N06N3 65AE5 marking 9D G973 marking eb5 EB5 MARKING

    Diode 9H

    Abstract: d5cd IPB031NE7N3 G
    Text: IPB031NE7N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q @D9=9J54 D53 8>? <? 7I 6? BCI>3 8B? >? EC B53 D9 6931D9 ?> Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y" I9 )( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB031NE7N3 Diode 9H d5cd IPB031NE7N3 G

    diode ED 1B

    Abstract: marking EB diode 5D j marking
    Text: IPB054N06N3 G IPP057N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J -&, Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB054N06N3 IPP057N06N3 diode ED 1B marking EB diode 5D j marking

    75D diode

    Abstract: No abstract text available
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J 1&/ Y" /( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 75D diode

    IPB035N08N3G

    Abstract: Diode MARKING 9h
    Text: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y" I9 ( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP037N08N3 IPI037N08N3 IPB035N08N3 IPB035N08N3G Diode MARKING 9h

    D1D5B

    Abstract: B175D DIODE ED 99
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J .&/ Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP070N08N3 IPI070N08N3 IPB067N08N3 D1D5B B175D DIODE ED 99

    B53 transistor

    Abstract: j177 TRANSISTOR J176 J177 equivalent SMPJ177 J177 PJ99 SMPJ176
    Text: Databook.fxp 1/13/99 2:09 PM Page B-53 B-53 01/99 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 226AA SMPJ176, SMPJ177 B53 transistor j177 TRANSISTOR J176 J177 equivalent SMPJ177 J177 PJ99 SMPJ176

    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


    Original     		PDF IPA075N15N3 CCD MARKING

    Untitled

    Abstract: No abstract text available
    Text: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     /&* Y" I9 )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


    Original     		PDF IPB072N15N3 IPP075N15N3 IPI075N15N3

    Untitled

    Abstract: No abstract text available
    Text: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y I9 (


    Original     		PDF IPP037N08N3 IPI037N08N3 IPB035N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    Untitled

    Abstract: No abstract text available
    Text: IPB030N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 V 9H 0 J R 9H"[Z#$YMd +&( Y I9 .( 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


    Original     		PDF IPB030N08N3 931D9? CG9D389 381B75à D5CD54 D1B75Dà

    4b 5c marking

    Abstract: No abstract text available
    Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5


    Original     		PDF BSC360N15NS3 4b 5c marking

    IPB065N15N3

    Abstract: 5F040 ED 05 Diode marking EB5
    Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		PDF IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5

    IPD320N20N3

    Abstract: marking EB5
    Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5


    Original     		PDF IPD320N20N3 7865AE5 marking EB5

    Untitled

    Abstract: No abstract text available
    Text: IPB054N06N3 G IPP057N06N3 G Ie\Q  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H .( J R ,?>=1H฀,& -&, Y I9 0( 6


    Original     		PDF IPB054N06N3 IPP057N06N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    diode 9CA

    Abstract: IPI032N06N3 G
    Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G  3 Power-Transistor Product Summary Features V 9H . J Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 R ,?>=1H฀,& *&1 Y Q฀(@D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? diode 9CA IPI032N06N3 G

    IPB025

    Abstract: IPB025N08N3 G
    Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD


    Original     		PDF IPB025N08N3 IPB025 IPB025N08N3 G

    aK 9AA diode

    Abstract: No abstract text available
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& 1&/ Y


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? aK 9AA diode

    BGY113A

    Abstract: BGY113B
    Text: N AUER PHILIPS/DISCRETE t.'ÌE » • tbS3*î31 Q03G5Û3 b53 H A P X Philips Components BGY113A/113B Datasheet status Preliminary specification date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in


    OCR Scan     		PDF BGY113A/113B BGY113A BGY113B OT288D. BGY113B

    tsv 518

    Abstract: BUW133 BUW133A BUW133H 133h
    Text: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast


    OCR Scan     		PDF BUW133 T-33-13 BUW133H 7Z21439 tsv 518 BUW133A 133h