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    NDS9936

    Abstract: Vi46 ab-1 national
    Contextual Info: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9936 LS01130 125-C bS01130 NDS9936 Vi46 ab-1 national PDF

    NDS9956A

    Contextual Info: National Semiconductor” M ay 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p ow er field effect tran sisto rs are produced using National's p ro p rie ta ry, high cell density, DMOS technology.


    OCR Scan     		NDS9956A b5G113G DD4D047 NDS9956A PDF

    "NPN Transistors" 2n3567

    Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
    Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40


    OCR Scan     		2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06 PDF