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onsemi NGB8206N IGBT 390V 20A 150W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206N	Tube			450	1 - 10 - 100 - 1000 $1.05991 10000 $1.05991	Buy Now
onsemi NGB8206NG IGBT 390V 20A 150W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NGB8206NG		1,788		1	1 - 10 - 100 $0.5945 1000 $0.4934 10000 $0.4399	Buy Now
Rochester Electronics LLC NGB8206NG IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NG	Tube			486	1 - 10 - 100 - 1000 $0.62 10000 $0.62	Buy Now
onsemi NGB8206NTF4 IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NTF4	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	NGB8206NTF4		447			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc NGB8206NT4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NT4G	Reel			800	1 - 10 - 100 - 1000 $0.91564 10000 $0.875	Buy Now

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B8206N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b8206 Abstract: B8206n Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D b8206 B8206n	PDF
Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D	PDF
NGB8206N Abstract: NGB8206NT4 Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N NGB8206N/D NGB8206N NGB8206NT4	PDF
b8206n Abstract: ignition IGBT NGB8206 Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N NGB8206N b8206n ignition IGBT NGB8206	PDF