BS3T31 Search Results

Contextual Info: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

Contextual Info: N AMER PHILIPS/DISCRETE 5SE ri fc>bS3T31 DQlfl733 1 D BUS14 BUS14A T - 3 3 -/S T SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TQ-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: b h S B T B l DOEOElaS 4 5SE D N AMER PHILIPS/DISCRETE PowerMOS transistor GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

bs208

Contextual Info: Philips Components Datasheet status Product specification dateof issue February 1991 BS208 P-channel enhancem ent m ode vertical D -M O S transistor PIN CONFIGURATION FEATURES PIN • Direct interface to C -M O S • High-speed switching • No secondary breakdown.

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bS3T31 0Q533bS 7 • BYP21 SERIES T- 03-/7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse leakage current, low forward voltage drop, ultra fast reverse recovery times, very low stored charge

Contextual Info: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

NT 407 F TRANSISTOR

Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Contextual Info: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.

BYP21

Abstract: BYP21-50
Contextual Info: N AMER PHIL I P S / D I S C R E T E SSE D • bfc,S3T31 00223fc.S 7 ■ BYH21 SERIES A T -Q 3 -J 7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

BFR29

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.

BFR94

Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency

LBE2008T

Abstract: LCE2008T LGE2008T
Contextual Info: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

BAS32L

Contextual Info: •I bb53T31 ODEMHÖM 250 « A P X N AUER PHILIPS/DISCRETE BAS32L b?E » HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-8 OC glass envelope w ith tin-plated

BUZ311

Abstract: P70D
Contextual Info: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

m2131

Abstract: BYV31-500 BYV31-500U S 0319
Contextual Info: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd

1540ct

Contextual Info: ea PBYR1535CT PBYR1540CT PBYR1545CT ” N AMER PHILIPS/DISCRETE 2SE D Q btiS3T31 0023=147 7 _ • SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES ~~ ~T-C>2-1~7 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in

BLX93A

Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Contextual Info: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS*3B131 0 0 1 4 ^ 5 • LV1721E50R MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in military and professional applications.

CNX82A

Abstract: philips cnx82a
Contextual Info: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC

Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D t.bS3T31 0 D 2 2 4 2 S T • A fcJYK 29 SLHItS T - O I- W ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and soft-recovery

BS208

Abstract: MB8075
Contextual Info: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

RTC3001

Abstract: RTC3003 RTC3005 PKB32001U PKB32003U PKB32005U PTB32001X PTB32003X PTB32005X 32005U
Contextual Info: N AMER PHILIPS/DISCRETE QbE » • bbSBTBl 0015CH3 T ■ p k . B 3 2 u u iu PKB32003U PKB32005U MAINTENANCE TYPES for new design use PTB32001X, PTB32003X, PTB32005X M ICRO W AVE POWER TRANSISTO RS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

BYX98-300

Abstract: BYX98 BYX98-300R xfsm
Contextual Info: BYX98 SERIES N AMER PHILIPS/DISCRETE 2SE D bb53'i31 0 0 5 555^ T • T - o i - n RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal po larity cathode to stud : BYX98-300 to 1200.

Contextual Info: TIP31; A TIP31B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A SILICON EPITAXIAL BASE POWER TRANSISTORS N PN transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. PNP complements are T IP 3 2 series.