BTIS3T31 Search Results

1540ct

Contextual Info: ea PBYR1535CT PBYR1540CT PBYR1545CT ” N AMER PHILIPS/DISCRETE 2SE D Q btiS3T31 0023=147 7 _ • SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES ~~ ~T-C>2-1~7 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in

TT 2222

Contextual Info: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile

BGY94C

Abstract: BGY94A BGY94B A08 RF Amplifier
Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPM ENT DATA1• GbE D ■ btiS3T31 Ü013514 ■ This data sheet contain! advance inform ation and ipecHrcatlon* are subject to change w ithout notice, BGV94A BGY94B BGY94C _ 86D 01056 D T -7*1'à<ì-C/ V . -N O R T H / A M P E R E X / D I S CRETE DbE D

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

Contextual Info: PBYR735 PBYR740 PBYR745 N AMER PHILIPS/DISCRETE 2SE D t>b53ci31 0022^27 1 • T -O Z -1 7 SC H O T T K Y -B A R R IE R RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in

Contextual Info: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

Contextual Info: N AMER PHILIPS/DISCRETE I UL DbE D 1 bbS3T31 0D1SDST I MRB12175YR MAINTENANCE TYPE for new design use MRB11175Y PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.

Contextual Info: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high

SOD-83

Abstract: HIGH VOLTAGE DIODE for microwave ovens lte in philips FMLM BYX90G 3 phase rectifier bb53
Contextual Info: N AMER PHILIPS/DISCRETE blE D bb53^31 O D S b b T 1! I IT T IAPX BYX90G E.H.T. A V A L A N C H E F A S T S O F T -R E C O V E R Y D IO D E * E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-com ponent fo r very high voltage stacks, fo r example, in X -ra y equipm ent with fre­

philips hybrid OM976

Abstract: OM976 philips om
Contextual Info: Philips Semiconductors bbüB^ Bl 003210^ T75 1 AP X Product specification Video output amplifier OM976 N AUER PHILIPS/DISCRETE FEATURES PINNING • DC coupled video amplifier for cathode drive, with a positive going video input PIN CONFIGURATION PIN • Low internal thermal resistance

BGY33

Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Contextual Info: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.

BLF545

Abstract: MCAB2 MCAB29 2322 731 capacitor 334 ceramic WCA832 sot26-8 MCA834 sot268 CS6-08
Contextual Info: Philips S em iconductors 00 30 14b ATS APX Product specification UHF push-pull power MOS transistor — — — 1 ^ _ FEATURES N BLF545 AMER PHILIPS/DISCRETE bTE » PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 ^ 3 1 0 D lt7 1 ti E • B Y588 T-£>/-/6~ BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. The device is intended for use as efficiency diode in horizontal deflection circuits between base and emitter terminals

Contextual Info: t.'lE D • bbSB^l QQ2 bS 4Q SSb H A P X A B Y 722 B Y 723 B Y 724 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* E H T rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess o f 30 kHz. The devices feature non­

Contextual Info: I I N A flE R P H IL IP S /D IS C R E T E 5SE D ^ 5 3 ^ 3 1 M A IN T E N A N C E T Y P E Q D 2577S 4 • BYW92 SERIES A 7 = 0 3 -1 *7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

diode sy 200

Abstract: UCM0J
Contextual Info: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

m lc 945

Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

transistor B A O 331T

Abstract: BUP23C 23CF BUP23BF BUP23CF
Contextual Info: [{ DEVELOPMENT DATA ^53=131 0013701 T • BUP23BF BUP23CF This data sheet contain» advance Information and specifications are subject to change without notice. N AUER PHILIPS/DISCRETE H5E D T “3 3 - i l SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SO T199 envelope intended for

Diode Marking 1e

Abstract: diode HOH BA223 AM radio AM band switching diode
Contextual Info: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage

BFU310

Abstract: BFU308 BFU309 L7E transistor transistor 309
Contextual Info: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

BB530

Contextual Info: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

Contextual Info: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

Contextual Info: • ^ 53^31 □□25hfll 0b2 ■ APX N APIER PHILIPS/DISCRETE BT148W SERIES b?E D J v THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting. They are intended fo r general purpose switching and phase-control applications.