BA 516 DIODE Search Results
BA 516 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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BA 516 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BA 516 diodeContextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BA V 7 0 - ISSUE 2 - JANUARY 1995 PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C ontinuous Reverse Voltage |
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BAV70 BAV70- 100mA BA 516 diode | |
Q65110A3624Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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Q65110A7885
Abstract: LBE6SG BA 516 diode U/25/20/TN26/15/850/smd led 5050 0.5 w datasheet
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D-93055 Q65110A7885 LBE6SG BA 516 diode U/25/20/TN26/15/850/smd led 5050 0.5 w datasheet | |
Q65111A0322Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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D-93055 Q65111A0322 | |
diode lt 0236
Abstract: Q65110A7885 LBE6SG E6SG-AABA-36-1 lt e6sg E6SG-T1U2-35 9 BJE 61 lt e6sg-aaba
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Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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BA 516 diodeContextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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D-93055 BA 516 diode | |
Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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e6sg
Abstract: S2U1 diode lt 0236 GPLY6135
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Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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diode lt 0236Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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D-93049 diode lt 0236 | |
bgt S2000
Abstract: MC68B09 HD6809P NAFI adcb 27 ASSEMBLER RR00110 SAA 1025 HD68B09 AOCB
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HD6809 HD68A09 HD68B09 HMCS6800 HD6809, HD68A09, bgt S2000 MC68B09 HD6809P NAFI adcb 27 ASSEMBLER RR00110 SAA 1025 HD68B09 AOCB | |
Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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Contextual Info: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead |
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TLP630 5000Vrms UL1577, E67349 TLP630 | |
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HD63C09EP
Abstract: HD63B09EP HD63C09E-CMOS HD63C09E OT31 saa 1030 hd63c09ec Hitachi HD63B09 hitachi HD6309e HD63B09E
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HD63B09E HD63C09E--------CMOS HD6309E HMCS6800 HD6809E. HD6809E HD63B09E, HD63C09EP HD63B09EP HD63C09E-CMOS HD63C09E OT31 saa 1030 hd63c09ec Hitachi HD63B09 hitachi HD6309e | |
nsp 106 thermistor
Abstract: nsp 105 thermistor nsp thermistor 106 nsp thermistor 10megohms 1N4001 general diode purpose surface mount 1N4001 SMT 1210 potentiometer cross reference chart
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1N4001 1N4007) 1N5817 1N5819) nsp 106 thermistor nsp 105 thermistor nsp thermistor 106 nsp thermistor 10megohms 1N4001 general diode purpose surface mount 1N4001 SMT 1210 potentiometer cross reference chart | |
transistor smd DAG
Abstract: smd transistor asy lcd inverter n mosfet cross reference smd transistor asy EA TRANSISTOR ASY 75 Royer oscillator diode d7b lm 6358 MAX753
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AX753/M AX754 MAX753/MAX754 transistor smd DAG smd transistor asy lcd inverter n mosfet cross reference smd transistor asy EA TRANSISTOR ASY 75 Royer oscillator diode d7b lm 6358 MAX753 | |
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES |
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BAS516 BAS516 MAM408 | |
NX8501
Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
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NX8501 TA-NWT-000983 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC | |
em 518 diodeContextual Info: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I |
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QM50CY-H E80276 E80271 em 518 diode | |
Contextual Info: JV\JYXAJV\ 19-0263: Rev 1; 7/95 12V or Adjustable, High-Efficiency, Low IQ , Step-Up DC DC C ontroller The M A X 1771 s te p -u p s w itc h in g c o n tro lle r p ro v id e s 90% efficie n cy over a 30m A to 2A load. A unique cu r re n t-lim ite d p u ls e -fre q u e n c y -m o d u la tio n PFM co n tro l |
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CMPZ5240/ MMBZ5240BL 300mA, DD141bfl | |
PCR 406 J
Abstract: Hitachi HD68B09E HD6309 PCF HITACHI PS5 1020 HD6309e SAA 1025 HD68B09E HD6809E LM 8002
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HD6809E HD68A09E, HD68B09E HMCS6800 JA000 PCR 406 J Hitachi HD68B09E HD6309 PCF HITACHI PS5 1020 HD6309e SAA 1025 HD68B09E LM 8002 | |
Contextual Info: Product Brief January 2002 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.25 µm 5-level metal technology. 2.5 V internal supply voltage and 3.3 V I/O supply voltage for speed and compatibility. |
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16-bit 208-Pin 240-Pin 352-Pin 432-Pin 680-Pin OR3L165B OR3L225B PN00-012FPGA PN99-053FPGA) | |
MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
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