25TC Search Results

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

Contextual Info: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R i =4.7kfl, R2=4.7kfl) • Complement to KSR1201 A B S O LU T E MAXIMUM RATINGS (TA*25TC)

Contextual Info: 2N6515 NPN EPITAXIAL SILICON TRAN SISTO R HIGH VOLTAGE TRANSÌSTOR TO-92 • Collector-Emitter Voltage: V ceo* 250V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (Ta-25TC) Characteristic Collector-Base Voltage Collector-Emitter Voltage

eeli

Contextual Info: • Ta — 25TC0# u sm ü Ÿ p iiÿ m - ti^m tix , * k , n x , ¡aæ, ¡ « « » i ' i i ' i i t i 1, â t t ï i  ^ f ê f f l L - i i K n # c i ± , tl i ê o t t • ■) t zn ^i^m ix ») * 1\ *> * , â t t r i i * * ! ë » i ’«Æ UTfc'), -e-«*íeL-c«.>stts-Wí;

Contextual Info: ra FORWARD INTERNATIONAL ELECTRONICS LID. MPSA06 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR * High Collector-Emitter Vohage Vceo=80V * Collector Dissipation Pc=625 mW Ta=25tC ABSOLUTE MAXIMUM RATINGS at Tantf*25°C

2SD1761

Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)

ferranti

Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
Contextual Info: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)

2SC3500

Abstract: 2SC3493 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495 2SC3494
Contextual Info: - 160 - Ta=25°C. *EP(ÌTc=25‘ C m % t± £ m 2SC3493 B \L VHF A/TV VHF 2SC3494 B ÌL FM RF/IF A 2SC3495 ìé LF A M Vc b o VcEO ICCDC) Pc Pc* IcBO (V) (V) (A) (W) (W) (/¿A) 15 12 % ft 4# ti (Ta=25tC ) [*EP(Ìtyp hp *CB (V) 0.02 0.15 0. 3 12 \ ni aA/

irfb220

Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Contextual Info: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111

Silicon N-Channel Junction FET sot23

Abstract: lcr tuner
Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION F ET FM TUNER VHF AMPLIFIER SOT-23 . NF =25dB TYP • I Y fs I -9 .0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (TA-25TC ) C haracteristic Sym bol Gate-Drain Voltage Qate-Current Power Dissipation Junction Temperature Storage Temperature

Ho56

Abstract: 50kV MD-50X1 312 ho
Contextual Info: #50kV^ SILICON HIGH VOLTAGE RECTIFYING DIODES MD-50X1 = ORIGIN ELECTRIC CO LTD • 4t * I • '} '& = > > ; • ? V X \ &>■$>— $> -y 2. • fflü I . v — 5ÖE T> i\ ■ • • • £ * & (Ta = 2 5 ic, » + Characteristics(Ta = 25TC in oil, unless otherwise specified)

sharp z-311j

Abstract: str 10006 JW-22kc OPCH a 322j RJ 000002 basic plc ladder diagram km 1667 datasheet JW-100SA JW-100SP
Contextual Info: R Version 2.0 Produced in May. 2004 Programmable Controller Model name JW-255CM JW-25TCM Z-339J Ethernet module Ethernet board User’s Manual J W-25 CM SDRD 12V S7 S6 S5 S4 5CM T ERFT S3 S2 S1 S0 ON S H I E L D OFF FG RESET （JW-255CM） Thank you for purchasing the Ethernet module board for the Sharp programmable controller.

2SC3119

Abstract: 2SC3790 2sc3807 B2C2C b2c2 25C3782 2SA1480 2sc3198 2sc3812 2SC3780
Contextual Info: - 172 - Ta=25tC, *EPÍáTc=25cC 33 2SC3779 S it S UHF LN H # 2SC3780 A VcBO V’cEO (V) (V) 20 Í C ( DC) (A) 12 0.1 m Pc Pc* I cbo , (W) (W) (max) ( t i A) 0.6 m ft Œ te (Ta=25°C) Miâtypfil] E VcB (V) 1 (min) (max) le/J e (A) y'cE (V) 12 40 200 (V)

2SD2371

Abstract: 2SD2367 2SD2369 2SD2368 2SD2370 2SD2372 2SD2373 2SD2383 2SD2425
Contextual Info: - 290 - <Ta=2513, *EP àTc=25tî ffjj i+ 2SD2367 m g m VcBO yCE-0 (V) (V) Hout 1500 Hout 1500 Hout 1500 2SD2370 Hout 1500 2SD2371 Hout 1500 2SD2368 2SD2369 fôT ^ “ F 700 700 % n JC(DC) Pc Pc» icBO (A) (W) (W) (max) UA) ft ft te (Ta=25tC ) OEPfítypíÜ]

2SD636 R

Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)

KSA539

Abstract: KSA542
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA539 LOW FREQUENCY AM PLIFIER • Complement to KSC8I5 • Collector-Base Voltage V Cbo = -60V • Collector Dissipation Pc = 400mW ABSO LU TE MAXIMUM RATINGS TA=25TC C haracteristic Rating Unit V cbo VcEO V ebo lc Pc Tj

Contextual Info: BCX70G NPN EPITAXIAL SILICON TRAN SISTO R GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS T a =25TC C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: MULTILAYER CHIP CERAMIC CAPACITOR jSfflfflY5vn#*ínjMa««at», « « « « s a u t, mm, ism ««*. • * ^E-25TC~85X:X im U l*l,*?SJt#tt]S+30%, -80%. * f f A O T m iÉ ttR M M É , Ä S i H H W W » * » . * mm m . R T & m m m 'f a . 0805 1 F ~r ® 104

IRFP9640

Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
Contextual Info: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ

VP0104N5

Abstract: VP0106N5 VP0109ND VN1310N3 VP0104N3 VP0106N2 VN1220ND VN1304N2 VN1304N3 VN1304ND
Contextual Info: - 338 - Ta=25tC f t H « ti: % % 1/ Vd s or Vg s * /CH Vd g (V) (V) (A) % V I d ss Ig s s Pd Id V g s th) min * /CH <W) (nA) Vg s (V) (m a ) Vd s (V) (V) max (V) fó Id (ntA) í# Ï Ds(on) Vd s = Vg s 14 (Ta=25°C) g fs Id (oií) Ciss Coss & Crss V g s =0

2SC3541

Abstract: 2SC3584 2SC3542 2SC3566 2SC3586 NEC-F3 2SC3539 2SC3537 2SC3538 2SC3544
Contextual Info: - 162 - n n Ta=25t , *EP(áTc=25tC) m 2SC3537 2SC3538 2SC3539 2SC3541 2SC3542 2SC3544 2SC3545 2SC3547A 2SC3547B 2SC3549 2SC3550 2SC3551 2SC3552 2SC3553 2SC3554 2SC3559 2SC3566 2SC3567 2SC3568 2SC3569 2SC3570 2SC3571 2SC3572 2SC3576 2SC3577 2SC3580 2SC3581

2SC4288A

Abstract: 2SC4288 2sc4292 2sc429 2SC4278 150D 2SC4248 2SC4249 2SC4250 2SC4251
Contextual Info: - 194 - m % w Ta=25‘C, *Ep(àTc=25tC m î± 2SC4248 2SC4249 2SC4250 MS 2SC4251 MS MS ms MS sm 2SC4252 2SC4253 2SC4255 2SC4256 2SC4257 2SC4258 2SC4259 2SC4260 2SC4261 2SC4262 2SC4263 2SC4264 2SC4265 2SC4266 2SC4269 2SC4270 2SC4271 2SC4272 2SC4273 2SC4274