Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BA101 Search Results

    BA101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS15BA101SDX/NOPB Texas Instruments 1.5-Gbps differential buffer with adjustable output voltage 8-WSON -40 to 85 Visit Texas Instruments Buy
    DS30BA101SQ/NOPB Texas Instruments 3.125-Gbps differential buffer 16-WQFN -40 to 85 Visit Texas Instruments Buy
    DS15BA101SDE/NOPB Texas Instruments 1.5-Gbps differential buffer with adjustable output voltage 8-WSON -40 to 85 Visit Texas Instruments Buy
    DS15BA101SD/NOPB Texas Instruments 1.5-Gbps differential buffer with adjustable output voltage 8-WSON -40 to 85 Visit Texas Instruments Buy
    DS30BA101SQX/NOPB Texas Instruments 3.125-Gbps differential buffer 16-WQFN -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    BA101 Price and Stock

    Panasonic Electronic Components EEE-HBA101UAP

    CAP ALUM 100UF 20% 10V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EEE-HBA101UAP Digi-Reel 3,180 1
    • 1 $0.63
    • 10 $0.378
    • 100 $0.2473
    • 1000 $0.19438
    • 10000 $0.19438
    		Buy Now
    EEE-HBA101UAP Cut Tape 3,180 1
    • 1 $0.63
    • 10 $0.378
    • 100 $0.2473
    • 1000 $0.19438
    • 10000 $0.19438
    		Buy Now
    EEE-HBA101UAP Reel 3,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.17786
    • 10000 $0.14085
    		Buy Now
    Newark EEE-HBA101UAP Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.162
    • 10000 $0.154
    		Buy Now
    TTI EEE-HBA101UAP Reel 2,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.15
    • 10000 $0.129
    		Buy Now
    Chip1Stop EEE-HBA101UAP Cut Tape 875
    • 1 -
    • 10 $0.409
    • 100 $0.16
    • 1000 $0.103
    • 10000 $0.103
    		Buy Now
    Master Electronics EEE-HBA101UAP 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1465
    • 10000 $0.1286
    		Buy Now
    Ozdisan Elektronik EEE-HBA101UAP
    • 1 $0.24046
    • 10 $0.24046
    • 100 $0.24046
    • 1000 $0.2091
    • 10000 $0.2091
    		Get Quote

    Texas Instruments DS15BA101SDE-NOPB

    IC REDRIVER LVDS 1CH 8WSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS15BA101SDE-NOPB Cut Tape 238 1
    • 1 $4.91
    • 10 $3.738
    • 100 $3.1233
    • 1000 $3.1233
    • 10000 $3.1233
    		Buy Now
    DS15BA101SDE-NOPB Digi-Reel 238 1
    • 1 $4.91
    • 10 $3.738
    • 100 $3.1233
    • 1000 $3.1233
    • 10000 $3.1233
    		Buy Now

    Texas Instruments DS30BA101SQE-NOPB

    IC REDRIVER 1CH 3.125GBPS 16WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS30BA101SQE-NOPB Digi-Reel 228 1
    • 1 $10.28
    • 10 $8.028
    • 100 $6.8463
    • 1000 $6.8463
    • 10000 $6.8463
    		Buy Now

    BUD Industries Inc NBA-10144

    BOX ABS GRAY 11.83"L X 7.85"W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NBA-10144 Bulk 146 1
    • 1 $91.75
    • 10 $76.4
    • 100 $91.75
    • 1000 $91.75
    • 10000 $91.75
    		Buy Now
    Mouser Electronics NBA-10144 3
    • 1 $91.42
    • 10 $76.36
    • 100 $67.81
    • 1000 $67.81
    • 10000 $67.81
    		Buy Now
    Newark NBA-10144 Bulk 100 1
    • 1 $95.05
    • 10 $79.39
    • 100 $70.52
    • 1000 $70.52
    • 10000 $70.52
    		Buy Now
    RS NBA-10144 Bulk 6 1
    • 1 $93.39
    • 10 $79.38
    • 100 $71.91
    • 1000 $71.91
    • 10000 $71.91
    		Buy Now
    Master Electronics NBA-10144 4
    • 1 $91.29
    • 10 $74.54
    • 100 $64.19
    • 1000 $63.23
    • 10000 $63.23
    		Buy Now
    Sager NBA-10144 85 1
    • 1 $108.5
    • 10 $90.4
    • 100 $67.8
    • 1000 $67.8
    • 10000 $67.8
    		Buy Now
    TestEquity LLC NBA-10144 91
    • 1 $83.46
    • 10 $83.46
    • 100 $83.46
    • 1000 $83.46
    • 10000 $83.46
    		Buy Now

    Kyocera AVX Components LP0BA1010A700

    RF FILTER LOWPASS 1.01GHZ 19ULGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LP0BA1010A700 Bulk 125 1
    • 1 $23.17
    • 10 $18.903
    • 100 $16.23732
    • 1000 $15.27277
    • 10000 $15.27277
    		Buy Now
    Avnet Americas LP0BA1010A700 Waffle Pack 18 Weeks 28
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Richardson RFPD LP0BA1010A700 28 1
    • 1 $12.5
    • 10 $12.5
    • 100 $12.5
    • 1000 $12.5
    • 10000 $12.5
    		Buy Now
    Find more BA101 price and stock on Findchips.com

    BA101 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA101 XPiQ DC/DC Converter Original PDF
    BA1010 Temex FERRITE DEVICES Original PDF
    BA1011 Temex FERRITE DEVICES Original PDF
    BA1012 Temex FERRITE DEVICES Original PDF
    BA1015 Temex FERRITE DEVICES Original PDF
    BA1016 Temex FERRITE DEVICES Original PDF
    BA1017 Temex FERRITE DEVICES Original PDF
    BA101A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA101A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA101B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA101B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA101C Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA101C Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BA101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    wson8

    Abstract: BA-101
    Text: BA101 www.ti.com SNLS234J – OCTOBER 2006 – REVISED APRIL 2013 BA101 1.5 Gbps Differential Buffer with Adjustable Output Voltage Check for Samples: BA101 FEATURES DESCRIPTION • • • • • • • The BA101 is a high-speed differential buffer for


    Original     		PDF DS15BA101 SNLS234J DS15BA101 wson8 BA-101

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    BA100 diode

    Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
    Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)


    Original     		PDF KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    K8P6415

    Abstract: K8P32 K8P3215u K8P6415UQB K8P64
    Text: Target Information FLASH MEMORY K8P6415UQB 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8P6415UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P6415 K8P32 K8P3215u K8P6415UQB K8P64

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		PDF K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379