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    BA96 Search Results

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    BA96 Price and Stock

    Micron Technology Inc MTFDKBA960TFR-1BC15ABYY

    7450 1TB M.2 SSD
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    DigiKey MTFDKBA960TFR-1BC15ABYY Box 8 1
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    Avnet Americas MTFDKBA960TFR-1BC15ABYY Tray 18 Weeks 1
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    Mouser Electronics MTFDKBA960TFR-1BC15ABYY 1
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    Newark MTFDKBA960TFR-1BC15ABYY Bulk 5
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    Micron Technology Inc MTFDKBA960TFR-1BC1ZABYY

    SSD 960GB M.2 MODULE TLC NVME
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    DigiKey MTFDKBA960TFR-1BC1ZABYY Bulk 5 1
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    Avnet Americas MTFDKBA960TFR-1BC1ZABYY Tray 18 Weeks 1
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    Mouser Electronics MTFDKBA960TFR-1BC1ZABYY
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    Newark MTFDKBA960TFR-1BC1ZABYY Bulk 4 1
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    Avnet Asia MTFDKBA960TFR-1BC1ZABYY 12 Weeks 5
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    Avnet Silica MTFDKBA960TFR-1BC1ZABYY 39 Weeks 180
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    New Advantage Corporation MTFDKBA960TFR-1BC1ZABYY 91 1
    • 1 $404.54
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    Schneider Electric XB4BA961

    CONFIG SW BODY PUSHBUT NON-ILLUM
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    DigiKey XB4BA961 Box 1
    • 1 $59.27
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    Mouser Electronics XB4BA961
    • 1 $57.12
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    Newark XB4BA961 Bulk 1
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    RS XB4BA961 Bulk 1 Weeks 1
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    Skyworks Solutions Inc 510GBA96M0000BAG

    XTAL OSC XO 96.0000MHZ CMOS SMD
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    DigiKey 510GBA96M0000BAG 200
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    Mouser Electronics 510GBA96M0000BAG
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    Richardson RFPD 510GBA96M0000BAG 1
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    Skyworks Solutions Inc 511BBA96M0000BAG

    XTAL OSC XO 96.0000MHZ LVDS SMD
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    DigiKey 511BBA96M0000BAG 200
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    Find more BA96 price and stock on Findchips.com

    BA96 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X10 schematic

    Abstract: BA96-01460A MMZ1608S121AT ca2 smd SOT-23 BA41-00312A MINISMDC075-2 TP602 BG1 d1 257 150uf 25v 7343 ACM2012-900-2P-T
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date APPROVAL DC-DC BOARD BA96-01460A BA41-00312A mp 10 10 , 08 , 2002 CHECK : : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-2 DC/DC Board


    Original     		PDF BA96-01460A BA41-00312A LTC3728 KSR1102 2N7002LT1 BA41-# X10 schematic MMZ1608S121AT ca2 smd SOT-23 MINISMDC075-2 TP602 BG1 d1 257 150uf 25v 7343 ACM2012-900-2P-T

    smd diode U12 c526

    Abstract: CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647
    Text: Option SEC CODE BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA81-03428A BA75-01863B BA96-03239A BA59-01985B BA81-03428A BA75-01863A BA96-03223A BA59-02020A BA81-03428A BA75-01863B BA96-03222A BA59-01953A BA81-03428A BA75-01863A


    Original     		PDF BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA96-03239A BA59-01985B smd diode U12 c526 CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    BCM4401

    Abstract: nvidia geforce 7300 MP0804H samsung BA41 01326A nvidia go 7300 PC-GF20 FR HTS548060M9AT00 BA59-01827A HTS541060G9AT00 broadcom bcm92045nmd
    Text: - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 1 Product Characteristic 1) High efficiency NotePC - Intel Napa Platform (Yonah Core CPU) & Centrino Technology - nVIDIA GeForce Go 7400 (Tourbo Cache) High performance Grahpic ※Factory Option


    Original     		PDF 533MHz 667MHz) 11a/b/g B141EW01 LTN141W1-L04-O LTN141W1-L04-G BA43-00149A BA43-00147A BA59-01691A BCM4401 nvidia geforce 7300 MP0804H samsung BA41 01326A nvidia go 7300 PC-GF20 FR HTS548060M9AT00 BA59-01827A HTS541060G9AT00 broadcom bcm92045nmd

    LED Clock Display 94hb

    Abstract: 94hb sanyo lcd 94hb BA68-01686A lsc-24081m alps touchpad 94HB BA41 01122A nylok BA42-00026A
    Text: 4 Main Board 4-1 Main Board Design 4-1-1 4-1-2 PURPOSE SX05 Intel CPU (Intel Centrino Mobile Technology) Mobile CPU Montara-GM 593 µFCBGA Intel 845G ICH4 ICH4-M Main Board (CATEGORY) Main Board Resource Chipset Spec. System Description of chip spec. and system resource


    Original     		PDF STS304-1/2H SD-R2312 BA68-02203A BA68-01688A BA64-00518A BA73-00238A BA62-00196A BA73-00342A LED Clock Display 94hb 94hb sanyo lcd 94hb BA68-01686A lsc-24081m alps touchpad 94HB BA41 01122A nylok BA42-00026A

    AR2425

    Abstract: aa-pb4nc6b 88E8055 ICH9M BCM92045NMD ATI Radeon T60H928 P-8600 csp1040 alcor AU6371
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - 2. 제품 특징 및 사양 1 제품 특징 1) 고성능 노트북 컴퓨터 - Intel Core 2 Duo Processor 및 DDR II Memory를 적용한 고성능 컴퓨터


    Original     		PDF T9600 80GHz T9400 53GHz P9500 P8600 40GHz P8400 26GHz AR2425 aa-pb4nc6b 88E8055 ICH9M BCM92045NMD ATI Radeon T60H928 P-8600 csp1040 alcor AU6371

    LTN150XG-L05

    Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
    Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A


    Original     		PDF BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756

    Alcor AU6366

    Abstract: nvidia go 7300 graphic card go 7300 nvidia geforce 7300 NVIDIA geforce chip synaptics 7300 Sanyo battery nvidia geforce go 7400 go 7400 NVIDIA geforce
    Text: - This Document can not be used without Samsung’s authorization - 2. Instruction and Specification 1 Product Characteristic 1) High Efficiency NotePC - Intel Napa Platform (Yonah Core CPU) & Centrino Technology ※ Factory Option (Merom/Yonah Celeron)


    Original     		PDF 533MHz 667MHz) 11a/b/g BA59-01788A BA59-01835A BA59-01834A B141EW01 E141EW01 LTN141W1-L040-O LTN141W1-L04-G Alcor AU6366 nvidia go 7300 graphic card go 7300 nvidia geforce 7300 NVIDIA geforce chip synaptics 7300 Sanyo battery nvidia geforce go 7400 go 7400 NVIDIA geforce

    smd diode c539

    Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
    Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF


    Original     		PDF S630/S670 BA60-00030A BA68-40005L BA70-00030A BA72-00063A BA73-00001A BA92-00073A 0404agrams smd diode c539 samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button

    RS600ME

    Abstract: intel GM45 cantiga hp 530 motherboard WDC-WD3200BEVT-22ZCT0 TS-L633A WD1600BEVS-22RST0 toshiba Phoenix BIOS specification delphi modem d40 Atheros wifi CSP1040
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 2. 제품 특징 및 사양 2-1. 제품 특징 고성능 노트북 컴퓨터 • • • • •


    Original     		PDF 5W/35W 9300M 250GB/ DDR501 BATT500 J512/513 RS600ME intel GM45 cantiga hp 530 motherboard WDC-WD3200BEVT-22ZCT0 TS-L633A WD1600BEVS-22RST0 toshiba Phoenix BIOS specification delphi modem d40 Atheros wifi CSP1040

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		PDF 711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips

    82378

    Abstract: No abstract text available
    Text: 82378 SYSTEM I/O SIO • Provides the Bridge Between the PCI Bus and ISA Bus ■ 100% PCI and ISA Compatible — PCI and ISA Master/Slave Interface — Directly Drives 10 PCI Loads and 6 ISA Slots — Supports PCI at 25 MHz and 33 MHz — Supports ISA from 6 MHz to 8.33


    OCR Scan     		PDF 32-bit 82C37A 16-bit 82378