BA81 Search Results

RTL8192

Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
Contextual Info: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W

dell E139761 manual

Abstract: DELL E139761 intel 810 chipset Compaq 1999 manual D1153 TUSB2046 1153D BA810 American Megatrends 02.54 BIOS amibios 1999 IT8761E
Contextual Info: Intel Desktop Board BA810 Technical Product Specification March 2000 Order Number A15858-001 The Intel® Desktop Board BA810 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized

samsung R540 service

Abstract: AR2413 10029a 2402-001144 LTM170EX R40PLUS BA99-10026A HP100-C30N-N15 M170EU01 C547 smd
Contextual Info: 10. Electrical Part List Main System Parts Code Location XP_HOME,W/O_BA G 6801-001239 WARRANTY 6801-001535 E-BOOK COUPON BA46-05935A S/W Media BA46-05530A OS CD BA68-03737A OS Manual BA81-00991A MOUSE PAD Part Name BA44-00215A Lishin-90W ASSY ACCESSORYXP_HOME

2Sc945 equivalent

Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560

smd diode U12 c526

Abstract: CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647
Contextual Info: Option SEC CODE BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA81-03428A BA75-01863B BA96-03239A BA59-01985B BA81-03428A BA75-01863A BA96-03223A BA59-02020A BA81-03428A BA75-01863B BA96-03222A BA59-01953A BA81-03428A BA75-01863A

SCB-1700N

Abstract: M470T2864QZ3-CF7 T60H928 2p2s HM160HI T60H976 HD64F2110BVTE10V 3M200MP BA42-00241A BA96-04141A
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-N310-KA01ZA Ver. Location 0001 NULL Part Number BA81-06952B RUBBER-HDD_BOTTOM;PEBBLE,SILICON, T0.6,W Part Name & Specification Q'ty SA/SNA 5 SA Parent Part BA75-02238A 0001

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

maa723

Abstract: Katalog tesla tranzistor MA748CN MAA725 Tesla MAC 156 MAA501 TESLA MA 7805 MAA436 MA7812 MA7815
Contextual Info: T U E g f f l M A ELEKTRONICKÉ SOUCÁSTKY KONCERN R O ZN O V Analogové integrované obvody PRO VSEOBECNÉ POUZITÍ Svazek A KONSTRUKCNl KATALOG POLOVODICOVŸCH SOUCASTEK KONSTRUKCNÍ KATALOG ELEKTRONICKŸCH SOUCÁSTEK HUA A n a lo g o v é in te g r o v a n é

ST191

Abstract: 3c509 ST19101WC disk controller receive transaction compaq 510 i960RP
Contextual Info: Competitive Analysis Mylex DAC960PG Adaptec AAA-133 Mylex Corporation 34551 Ardenwood Blvd. Fremont, CA 94555-3607 Tel: 510 796-6100 Sales Fax: (510) 745-8016 International Sales Fax: (510) 745-7821 www.mylex.com Revision 2.0 May 26, 1998 Table of Contents

BA102

Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Contextual Info: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

samsung ba92

Abstract: BA137 k8p3215
Contextual Info: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

diode ba102

Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Contextual Info: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

MA739PC

Abstract: ma739c TA739 a739 amplifiers circuit diagram tv audio amplifier circuit diagram TAA630S ta73 chroma section function A732
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M3064 Sound IF Am p. Lim. Detector //A3065 Video Amplifier TBA970 Chrom a Processing N T S C AiA746, n A780, M 7 8 1 , /uA787, M 7 8 8 Chrom a Processing P A L TAA630S, TBA510, TBA520, TBA540, TBA560C, TBA990

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

BA100 diode

Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Contextual Info: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BA41-00727A

Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m