BADDR11 Search Results

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

mac232

Abstract: LM2596S-ADJ AMD socket fm1 pinout MAX232 smd RS232 MAX232 smd htc legend NEXUS CONNECTOR TP 120 htc LM2596 max232cse 3.3v JTAG header 7x2 smd
Contextual Info: MAC7100EVB Users Manual Revision 1.1 November 2004 Note – This users manual is for RE11505F Rev O PCBs MAC7100EVB Users Manual Rev 1.1 November 2004 Revision History: Revision 0.2 1.0 1.1 Date 27 June 2003 18 Sept 2003 12 Nov 2004 Author A. Robertson A. Robertson

Contextual Info: in te i MILITARY i960 MX MICROPROCESSOR OVERVIEW The i960™ MX processor is a military member of Intel's second generation of i960 embedded microprocessors. These second generation i960 processors feature a Superscalar core that will decode and sequence multiple

I960 mx

Abstract: 271194 marking A17 DIODE marking ED BDATA23 i960mx 27119
Contextual Info: In te l. MILITARY i960 MM/MX SUPERSCALAR MICROPROCESSOR Implements JIAWG 32-bit ISA Standard i960® MX Processor Only High-Performance 32-bit Superscalar Architecture — Up to Three Instructions per Clock Execution — Five Parallel Execution Units — Load/Store Architecture

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
Contextual Info: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in

32kx8 sram

Abstract: VSS115 32kxS
Contextual Info: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day

Contextual Info: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day

VR5500

Abstract: VR4181A user manual VR4181a VR10000 Series ECU 206 7.4.5 ras 0610 relay nec sgp U14273E B08212 ns16550AN
Contextual Info: User’s Manual TM VR4181A 64-/32-Bit Microprocessor Hardware µPD30181A µPD30181AY Document No. U16049EJ1V0UM00 1st edition Date Published August 2002 N CP(K) 2002 1997 Printed in Japan [MEMO] 2 User’s Manual U16049EJ1V0UM NOTES FOR CMOS DEVICES 1

Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a

Contextual Info: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec