BARE DIE MOSFET Search Results

AN-1060

Abstract: Silicon Controlled Rectifier Manual an1060 ultrasonic bond Three bond jedec tray bare die JESD 49
Contextual Info: AN-1060 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA BARE DIE: HANDLING AND STORAGE By Richard Clark Introduction International Rectifier supply a range of power devices in a variety of packages and in Bare Die form. The Bare Die products are available in a

Silicon Controlled Rectifier Manual

Abstract: jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060
Contextual Info: Application Note AN-1060 Bare Die: Handling and Storage By Richard Clark Table of Contents Page Introduction .1 Packing/Carrier Type .1

CLAY31

Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
Contextual Info: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has

bare Die mosfet

Abstract: MOSFET Transistors IRL SLD-2083 80021 915 MHz RFID LDMOS SLD-2000 SLD-2083CZ schematic diagram 800 watt power amplifier 50 Watt MOSFET amplifier
Contextual Info: SLD-2000 Product Description 12 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a driver or output stage for

1000 watt mosfet power amplifier

Abstract: amplifier circuit diagram 1000 watt 80021 SLD-1000 SLD-1083CZ AN-039 1000 watts amplifier schematic diagram with part rf amplifier class a fet mosfet bare Die power mosfet
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

DMOSFET

Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
Contextual Info: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate

Contextual Info: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

CPMF-1200-S080B

Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
Contextual Info: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

bare Die mosfet

Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
Contextual Info: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G

1000 watt mosfet power amplifier

Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

Contextual Info: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

CPMF-1200-S160B

Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
Contextual Info: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

bare Die mosfet

Abstract: SLD1083 MOSFET 20 NE 50 Z
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

Contextual Info: S2308 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 280mW ID 14A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: Standard Products RAD7130-NCx Power MOSFET Die Datasheet January, 2014 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7164-NCx Power MOSFET Die Data Sheet January, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  150Vbreakdown voltage  35 A current rating  0.024RDS on Aeroflex RAD’s RAD7164-NCx Power MOSFET Die are available now for RadHard applications. Using proven

Contextual Info: Standard Products RAD7130-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7234-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  12 A current rating  0.20RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

bare Die Si mosfet

Abstract: bare Die mosfet FORWARD23
Contextual Info: Standard Products RAD7130-NFx Power MOSFET Datasheet October, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100V breakdown voltage  22 A current rating  0.08RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7230-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  200Vbreakdown voltage  12 A current rating  0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7130-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  100Vbreakdown voltage  22 A current rating  0.05RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7230-NCx Power MOSFET Die Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  200Vbreakdown voltage  12 A current rating  0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom

Contextual Info: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet September, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom