BAV80 Search Results

Contextual Info: BAV806 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25#

Contextual Info: BAV805 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25#

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

MMBD1502A

Abstract: LS923 BAV80 1N4148 SOT-23 MARKING JM FDH444 1N4148 ll-34 1N3070 1N459 1N459A
Contextual Info: fcot a m bSDllBO DOHTSO? 4Z3 • NATL S E H I C 0 N D Irrm nA Max V RRM (Volts) Min 250 200 150 Device (D ISCRET E) @ iF Iff (ns) (Volts) <n»A) Max Max V RRM Package* (Volts) Min Vfiw I f Irrm Device Diodes Silicon Single Junction Diodes (nA) Max (1»)

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published