BAW56LT1 Search Results

BAW56LT1

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

BAW56LT1

Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
Contextual Info: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit

BAW56LT1

Abstract: 2G132 g131
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode BAW56LT1 1 CATHODE 3 ANODE 3 2 CATHODE 1 2 CASE 318–08, STYLE12 SOT– 23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current

BAW56LT1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAW56LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 m A IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range

Contextual Info: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage

BAW56LT1

Contextual Info: BAW56LT1 DUAL SURFACE MOUNT SWITCHING DIODE SOT-23 Fast Switching Speed 3 High Conductance Surface Mount Package Ideally Suited for Automatic Inscrtion 1 2 3 1 CATHODE ANODE 2 Marking All CATHODE ABSOLUTE MAXIMUM RATINGS Parameter o Ta=25 C Symbol Rating

Contextual Info: MOTOROLA O rder this docum ent by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ANODE 3 O -— ' H N O 1 ° 2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Sym bol Value Unit Reverse Voltage

Substrate alumina

Contextual Info: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12

BAW56LT1

Contextual Info: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulate Diodes BAW56LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 m A IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range 0. 4 0. 95

BAW56LT1G

Abstract: BAW56LT3G
Contextual Info: BAW56LT1G Dual Switching Diode Common Anode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge)

Contextual Info: BAW56LT1G, BAW56LT1G, BAW56LT3G, SBAW56LT3G, BAW56LT1G Dual Switching Diode Common Anode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318

BAW56LT1

Contextual Info: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE 1 ANODE 3 2 CATHODE 3 MAXIMUM RATINGS EACH DIODE 1 Symbol Value Unit Reverse Voltage VR 70 Vdc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAW56LT1 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 225 mW（Tamb=25℃） Forward Current IF : 200 mA Reverse Voltage VR : 70 V Operating and storage junction temperature range

Contextual Info: Monolithic Dual Switching Diode Common Anode BAW56LT1 1 CATHODE 3 ANODE 3 2 CATHODE 1 2 CASE 318–08, STYLE12 SOT– 23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

BAW56LT3

Contextual Info: BAW56LT1 Preferred Device Monolithic Dual Switching Diode Common Anode MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol Value Unit VR 70 Vdc IF 200

AA1M

Contextual Info: BAW56LT1G, BAW56LT1G, BAW56LT3G, SBAW56LT3G Dual Switching Diode Common Anode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

SBAW56LT1G

Abstract: BAW56LT1G
Contextual Info: BAW56LT1G, BAW56LT1G, BAW56LT3G, SBAW56LT3G, BAW56LT1G http://onsemi.com Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318

A1.M

Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G
Contextual Info: BAW56LT1 Preferred Device Monolithic Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

diode marking A7 SOD123

Contextual Info: BAV70 FM120-M+ BAV99 THRU BAW56LT1 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch

TO236 footprint

Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G 556 square wave generator
Contextual Info: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit PD 225 mW Rating

BAW56LT1

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

BAW56LT1

Contextual Info: BAW56LT1 DUAL SURFACE MOUNT SWITCHING DIODE 0.40 Fast Switching Speed High Conductance 2.40 1.30 Surface Mount Package Ideally Suited for Automatic Inscrtion 1.90 2.90 1.10 Marking All SOT-23 o ABSOLUTE MAXIMUM RATINGS Ta=25 C Parameter Symbol Rating Unit